@inproceedings{5e0b8f73b7cc4841b456d86508641e65,
title = "Effect of a Si additive on an Al grain boundary: A first-principles investigation",
abstract = "The electronic structure of an Al grain boundary (GB) with Si as an additive has been investigated by a first-principles method. Si has been found to increase the charge density around itself and along the GB, and such increase can be enhanced with increasing Si concentration. Same effect occurs when Si is added in an Al GB with segregated Na impurity. The results suggest a possible strengthening effect of Si on the Al GB, and Si thus can be a good candidate additive for suppressing the Al intergranular embrittlement caused by impurity segregation.",
keywords = "Al grain boundary, Electronic structure, First-principles, Si",
author = "Ying Zhang and Lu, \{Guang Hong\} and Han Zhang and Tianmin Wang and Shenghua Deng and Xuelan Hu",
year = "2007",
doi = "10.4028/0-87849-432-4.829",
language = "英语",
isbn = "0878494324",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 2",
pages = "829--832",
booktitle = "Progress in Light Metals, Aerospace Materials and Superconductors",
address = "瑞士",
edition = "PART 2",
note = "2006 Beijing International Materials Week, 2006 BIMW - 2006 Beijing International Conference on Aluminum Materials, BICAM 2006 ; Conference date: 25-06-2006 Through 30-06-2006",
}