Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS₂ monolayer on vicinal a-plane sapphire

The growth of wafer-scale single-crystal two-dimensional transition metal dichalcogenides (TMDs) on insulating substrates is critically important for a variety of high-end applications^1–4. Although the epitaxial growth of wafer-scale graphene and hexagonal boron nitride on metal surfaces has been reported^5–8, these techniques are not applicable for growing TMDs on insulating substrates because of substantial differences in growth kinetics. Thus, despite great efforts^9–20, the direct growth of wafer-scale single-crystal TMDs on insulating substrates is yet to be realized. Here we report the successful epitaxial growth of two-inch single-crystal WS₂ monolayer films on vicinal a-plane sapphire surfaces. In-depth characterizations and theoretical calculations reveal that the epitaxy is driven by a dual-coupling-guided mechanism, where the sapphire plane–WS₂ interaction leads to two preferred antiparallel orientations of the WS₂ crystal, and sapphire step edge–WS₂ interaction breaks the symmetry of the antiparallel orientations. These two interactions result in the unidirectional alignment of nearly all the WS₂ islands. The unidirectional alignment and seamless stitching of WS₂ islands are illustrated via multiscale characterization techniques; the high quality of WS₂ monolayers is further evidenced by a photoluminescent circular helicity of ~55%, comparable to that of exfoliated WS₂ flakes. Our findings offer the opportunity to boost the production of wafer-scale single crystals of a broad range of two-dimensional materials on insulators, paving the way to applications in integrated devices.