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Doping-induced superconductivity in the topological semimetal Mo5Si3

  • Ji Feng Wu
  • , Chenqiang Hua
  • , Bin Liu
  • , Yanwei Cui
  • , Qinqing Zhu
  • , Guorui Xiao
  • , Siqi Wu
  • , Guanghan Cao
  • , Yunhao Lu
  • , Zhi Ren*
  • *此作品的通讯作者
  • Westlake University
  • Fudan University
  • Zhejiang University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Chemical doping of topological materials may provide a possible route for realizing topological superconductivity. However, all such cases known so far are based on chalcogenides. Here we report the discovery of superconductivity induced by Re doping in the topological semimetal Mo5Si3 with a tetragonal structure. Partial substitution of Re for Mo in Mo5-xRexSi3 results in an anisotropic shrinkage of the unit cell up to the solubility limit of approximately x = 2. Over a wide doping range (0.5 ≤ x ≤ 2), these silicides are found to be weakly coupled superconductors with a fully isotropic gap. Tc increases monotonically with x from 1.67 to 5.78 K, the latter of which is the highest among superconductors of the same structural type. This trend in Tc correlates well with the variation of the number of valence electrons and is mainly ascribed to the enhancement of electron-phonon coupling. In addition, band structure calculations reveal that superconducting Mo5-xRexSi3 exhibits nontrivial band topology characterized by Z2 invariants (1;000) or (1;111) depending on the Re doping level. Our results suggest that transition metal silicides are a fertile ground for the exploration of candidate topological superconductors.

源语言英语
页(从-至)8930-8937
页数8
期刊Chemistry of Materials
卷32
期20
DOI
出版状态已出版 - 27 10月 2020
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