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Disorder-Engineered Composite Topological Spin Textures and Their Manipulation in a Room-Temperature 2D van der Waals Ferromagnet

  • Xinyi Zhou
  • , Iftikhar Ahmed Malik*
  • , Chen Liu
  • , Lan Bo
  • , Hanqing Shi
  • , Vanessa Li Zhang
  • , Xixiang Zhang*
  • , Yi Du
  • , Yan Zhou
  • , Sheng Liu*
  • , Ting Yu*
  • *此作品的通讯作者
  • Wuhan University
  • King Abdullah University of Science and Technology
  • The Chinese University of Hong Kong, Shenzhen
  • Waseda University
  • Beihang University
  • Huazhong University of Science and Technology
  • Wuhan Institute of Quantum Technology

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The realization of practical spintronic devices based on topological spin textures is fundamentally limited by the skyrmion Hall effect, an intrinsic phenomenon that drives transverse motion and limits device efficiency. Composite quasiparticles with a net-zero topological charge, such as skyrmioniums, are theoretically predicted to suppress this effect. However, the controlled stabilization and electrical manipulation of magnetic skyrmioniums and related higher-order topological spin textures in two-dimensional (2D) materials under ambient conditions remain challenging. Here, we demonstrate the room-temperature stabilization of skyrmioniums and higher-order topological spin textures in exfoliated flakes of the van der Waals ferromagnet Fe3GaTe2 through a disorder-engineering protocol. By introducing atomic-scale structural defects through thermal annealing, we create a disorder-modified magnetic landscape that is consistent with local inversion symmetry breaking and enhanced local Dzyaloshinskii–Moriya interaction, thereby favoring the stabilization of these exotic magnetic states. This mechanism is further supported by micromagnetic modeling. Furthermore, we show that electrical currents can drive topological phase transitions, subsequently transforming skyrmion bags into skyrmioniums and ultimately into skyrmions. The direct observation of linear, Hall-free dynamics of the skyrmionium confirms its potential for next-generation racetrack memory and logic devices, establishing defect engineering as a viable pathway for harnessing complex topological states in 2D magnets.

源语言英语
期刊Advanced Functional Materials
DOI
出版状态已接受/待刊 - 2026

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