Dielectric properties of TbMnO3 ceramics

C. C. Wang; Y. M. Cui; L. W. Zhang

doi:10.1063/1.2430634

Dielectric properties of TbMnO₃ ceramics

C. C. Wang
, Y. M. Cui
, L. W. Zhang^*

^*此作品的通讯作者

物理学院

Tsinghua University

科研成果: 期刊稿件 › 文章 › 同行评审

112 引用（Scopus）

摘要

The complex dielectric properties for ceramic samples of TbMn O3 were investigated as functions of temperature (100 K≤T≤360 K) and frequency (100 Hz≤f≤100 kHz). Two thermally activated dielectric relaxations were found with the activation energies of 0.30 and 0.22 eV for the high- and low-temperature relaxations, respectively. By means of complex impedance analysis the high-temperature relaxation was identified to originate from the internal barrier-layer capacitor effects related to the grain boundaries, and the low-temperature relaxation was ascribed to the dipolar effects induced by charge-carrier-hopping motions inside the grains.

源语言	英语
文章编号	012904
期刊	Applied Physics Letters
卷	90
期	1
DOI	https://doi.org/10.1063/1.2430634
出版状态	已出版 - 2007

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AB - The complex dielectric properties for ceramic samples of TbMn O3 were investigated as functions of temperature (100 K≤T≤360 K) and frequency (100 Hz≤f≤100 kHz). Two thermally activated dielectric relaxations were found with the activation energies of 0.30 and 0.22 eV for the high- and low-temperature relaxations, respectively. By means of complex impedance analysis the high-temperature relaxation was identified to originate from the internal barrier-layer capacitor effects related to the grain boundaries, and the low-temperature relaxation was ascribed to the dipolar effects induced by charge-carrier-hopping motions inside the grains.

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Dielectric properties of TbMnO3 ceramics

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Dielectric properties of TbMnO₃ ceramics