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Design of low-voltage CMOS amplifier with high EMI immunity

  • Beihang University

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

A low-voltage bulk-driven amplifier with high electromagnetic interference (EMI) immunity is proposed. To improve EMI immunity of the bulk-driven amplifier, a partial positive feedback enhances its equivalent transconductance, an input voltage-drop structure modifies its DC nonlinearity, and a dual input-stage ensures the desired AC feature. Theoretical analysis and simulation results for EMI robustness are presented and compared with the classical bulk-driven amplifier: the offset voltage is less than 50mV over the whole considered frequency range.

源语言英语
主期刊名2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781479923342
DOI
出版状态已出版 - 13 3月 2014
活动2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, 中国
期限: 18 6月 201420 6月 2014

出版系列

姓名2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

会议

会议2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
国家/地区中国
Chengdu
时期18/06/1420/06/14

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