TY - GEN
T1 - Design and optimization of an area-efficient SOT-MRAM
AU - Wang, Chao
AU - Wang, Zhaohao
AU - Wu, Bi
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - Spin orbit torque magnetic random access memory (SOT-MRAM) has attracted numerous research interests since it promises to overcome the write speed and energy bottlenecks of the conventional STT-MRAM. However, the cell density of SOT-MRAM is constrained due to more access transistors. In this work, we present a NAND-Like architecture for SOT-MRAM with a single transistor and several diodes, as well as a novel adaptive array design based on the proposed cell structure. Compared with the standard SOTMRAM, the proposed SOT-MRAM achieves significant improvement in the cell density by sharing transistors, meanwhile attains a comparable write speed. The overhead of write energy can be compensated by a well-designed write policy.
AB - Spin orbit torque magnetic random access memory (SOT-MRAM) has attracted numerous research interests since it promises to overcome the write speed and energy bottlenecks of the conventional STT-MRAM. However, the cell density of SOT-MRAM is constrained due to more access transistors. In this work, we present a NAND-Like architecture for SOT-MRAM with a single transistor and several diodes, as well as a novel adaptive array design based on the proposed cell structure. Compared with the standard SOTMRAM, the proposed SOT-MRAM achieves significant improvement in the cell density by sharing transistors, meanwhile attains a comparable write speed. The overhead of write energy can be compensated by a well-designed write policy.
KW - High density
KW - Magnetic random access memory (MRAM)
KW - Spin orbit torque (SOT)
KW - Write policy
UR - https://www.scopus.com/pages/publications/85069456869
U2 - 10.1109/EDSSC.2019.8754166
DO - 10.1109/EDSSC.2019.8754166
M3 - 会议稿件
AN - SCOPUS:85069456869
T3 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
BT - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Y2 - 12 June 2019 through 14 June 2019
ER -