Deep level transient spectroscopy and TEM analysis of defects in Eu implanted GaN

A. Colder; T. Wojtowicz; P. Marie; P. Ruterana; V. Matias; M. Mamor; A. Vantomme; S. Eimer; L. Méchin

doi:10.1002/pssc.200461504

Deep level transient spectroscopy and TEM analysis of defects in Eu implanted GaN

A. Colder
, T. Wojtowicz^*
, P. Marie
, P. Ruterana
, V. Matias
, M. Mamor
, A. Vantomme
, S. Eimer
, L. Méchin

^*此作品的通讯作者

CNRS
KU Leuven
GREYC - Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

Deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) are used to study europium implanted gallium nitride layers. The implantation was realised at room temperature in the random and channeled geometries. From DLTS, we determine intrinsic defects with associated levels located in the band gap (below the conduction band). Besides, we point out a new electron trap named Eu2. Its associated level is located at about E_c -0.36 eV and the defect is probably related to the europium rare-earth ion. TEM investigation shows a difference in structure caused by changing the geometry of implantation. The random implanted sample contains numerous planar defects.

源语言	英语
页（从-至）	2450-2453
页数	4
期刊	Physica Status Solidi C: Conferences
卷	2
期	7
DOI	https://doi.org/10.1002/pssc.200461504
出版状态	已出版 - 2005
已对外发布	是

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@article{74cdc82ab2db4ef7a47621d4350fdfe7,

title = "Deep level transient spectroscopy and TEM analysis of defects in Eu implanted GaN",

abstract = "Deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) are used to study europium implanted gallium nitride layers. The implantation was realised at room temperature in the random and channeled geometries. From DLTS, we determine intrinsic defects with associated levels located in the band gap (below the conduction band). Besides, we point out a new electron trap named Eu2. Its associated level is located at about Ec -0.36 eV and the defect is probably related to the europium rare-earth ion. TEM investigation shows a difference in structure caused by changing the geometry of implantation. The random implanted sample contains numerous planar defects.",

author = "A. Colder and T. Wojtowicz and P. Marie and P. Ruterana and V. Matias and M. Mamor and A. Vantomme and S. Eimer and L. M{\'e}chin",

year = "2005",

doi = "10.1002/pssc.200461504",

language = "英语",

volume = "2",

pages = "2450--2453",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "7",

}

TY - JOUR

T1 - Deep level transient spectroscopy and TEM analysis of defects in Eu implanted GaN

AU - Colder, A.

AU - Wojtowicz, T.

AU - Marie, P.

AU - Ruterana, P.

AU - Matias, V.

AU - Mamor, M.

AU - Vantomme, A.

AU - Eimer, S.

AU - Méchin, L.

PY - 2005

Y1 - 2005

N2 - Deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) are used to study europium implanted gallium nitride layers. The implantation was realised at room temperature in the random and channeled geometries. From DLTS, we determine intrinsic defects with associated levels located in the band gap (below the conduction band). Besides, we point out a new electron trap named Eu2. Its associated level is located at about Ec -0.36 eV and the defect is probably related to the europium rare-earth ion. TEM investigation shows a difference in structure caused by changing the geometry of implantation. The random implanted sample contains numerous planar defects.

AB - Deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) are used to study europium implanted gallium nitride layers. The implantation was realised at room temperature in the random and channeled geometries. From DLTS, we determine intrinsic defects with associated levels located in the band gap (below the conduction band). Besides, we point out a new electron trap named Eu2. Its associated level is located at about Ec -0.36 eV and the defect is probably related to the europium rare-earth ion. TEM investigation shows a difference in structure caused by changing the geometry of implantation. The random implanted sample contains numerous planar defects.

UR - https://www.scopus.com/pages/publications/27344438909

U2 - 10.1002/pssc.200461504

DO - 10.1002/pssc.200461504

M3 - 文章

AN - SCOPUS:27344438909

SN - 1610-1634

VL - 2

SP - 2450

EP - 2453

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

ER -

Deep level transient spectroscopy and TEM analysis of defects in Eu implanted GaN

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