TY - JOUR
T1 - Creep-coordinated behaviors of the σ phase with stacking disordering defects in a Ni-based single crystal superalloy
AU - Zhang, Tianyu
AU - Wang, Wenwen
AU - Guo, Wenqi
AU - Zhao, Haigen
AU - Wu, Xiaoxiang
AU - Yu, Changkui
AU - Gao, Yuanhang
AU - Zhang, Mi
AU - Liu, Zijin
AU - Pei, Yanling
AU - Li, Shusuo
AU - Gong, Shengkai
N1 - Publisher Copyright:
© 2026 The Author(s).
PY - 2026/3
Y1 - 2026/3
N2 - Ni-based single crystal superalloys (Ni-SXs) generally precipitate unfavorable topologically close-packed (TCP) phases at elevated temperatures. Conventional design strategies primarily aim to suppress TCP phase formation; however, this approach often involves an unavoidable trade-off between material cost and creep resistance. To tackle the dilemma, we designed a creep-coordinated TCP phase (σ phase) in a Ni-SX through harnessing the (001)σ stacking disordering defects. Here, based on atomic-scale analysis and first-principles calculations, we systematically elucidate the roles of the (001)σ stacking disordering defects in facilitating creep-coordinated behaviors of the σ phase, which include the self-regulation of interface mismatches, the transformation of growth patterns, and the cooperative deformations with the matrix. These behaviors enable the σ phase to optimize the adaptability for interface mismatches, promote morphological spheroidization, and break through the traditionally hard and brittle nature, thereby supporting the outstanding creep performance of the Ni-SX. Our work presents an effective and sustainable strategy for improving the microstructure stability and performance of Ni-SXs, providing novel insights into high-performance alloy design through manipulating the TCP (σ) phase.
AB - Ni-based single crystal superalloys (Ni-SXs) generally precipitate unfavorable topologically close-packed (TCP) phases at elevated temperatures. Conventional design strategies primarily aim to suppress TCP phase formation; however, this approach often involves an unavoidable trade-off between material cost and creep resistance. To tackle the dilemma, we designed a creep-coordinated TCP phase (σ phase) in a Ni-SX through harnessing the (001)σ stacking disordering defects. Here, based on atomic-scale analysis and first-principles calculations, we systematically elucidate the roles of the (001)σ stacking disordering defects in facilitating creep-coordinated behaviors of the σ phase, which include the self-regulation of interface mismatches, the transformation of growth patterns, and the cooperative deformations with the matrix. These behaviors enable the σ phase to optimize the adaptability for interface mismatches, promote morphological spheroidization, and break through the traditionally hard and brittle nature, thereby supporting the outstanding creep performance of the Ni-SX. Our work presents an effective and sustainable strategy for improving the microstructure stability and performance of Ni-SXs, providing novel insights into high-performance alloy design through manipulating the TCP (σ) phase.
KW - High-resolution scanning transmission electron microscopy
KW - Ni-based single crystal superalloy
KW - Stacking disordering defect
KW - Topologically close-packed phase
KW - σ phase
UR - https://www.scopus.com/pages/publications/105029032919
U2 - 10.1016/j.matdes.2026.115541
DO - 10.1016/j.matdes.2026.115541
M3 - 文章
AN - SCOPUS:105029032919
SN - 0264-1275
VL - 263
JO - Materials and Design
JF - Materials and Design
M1 - 115541
ER -