摘要
Continuous wave (CW) and passively Q-switched (PQS) laser properties at 1062 nm of the Nd:LuxGd3-xGa5O12 (Nd:LGGG) disordered crystal have been demonstrated. The doping concentrations of Nd3+ and Lu3+ in the as obtained crystal were measured to be 0.96 and 0.66 at.%, respectively. In the CW regime, the output power of 9.73 W was obtained with an optical-to-optical efficiency as high as 60.7% and slope ef- ficiency of 61.2%. During the passively Q-switched operation, the maximum output power of 1.24 W was achieved under the absorbed pump power of 6.86 W. The maximum peak power of 14.20 kW and single pulse energy of 148 μJ were obtained with the Toc = 10% under the absorbed pump power of 6.36 W. The results are much better than those obtained with Nd:LGGG crystal doped with 13.6 at.% Lu3+ and 0.53 at.% Nd3+ ions.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 833-837 |
| 页数 | 5 |
| 期刊 | Laser Physics Letters |
| 卷 | 9 |
| 期 | 12 |
| DOI | |
| 出版状态 | 已出版 - 2012 |
| 已对外发布 | 是 |
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