Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency

Aqing Chen; Kaigui Zhu

doi:10.1016/j.solener.2011.10.015

Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency

Aqing Chen
, Kaigui Zhu^*

^*此作品的通讯作者

物理学院

Beihang University
Leshan Vocational and Technical College

科研成果: 期刊稿件 › 文章 › 同行评审

40 引用（Scopus）

摘要

The p-type a-Si:H/n-type c-Si (P ⁺ a-Si:H/N ⁺ c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P ⁺ a-Si:H/N ⁺ c-Si solar cells. With the optimized parameters set, the P ⁺ a-Si:H/N ⁺ c-Si solar cell reaches a high efficiency (η) up to 21.849% (FF: 0.866, V _OC: 0.861V, J _SC: 29.32mA/cm ²).

源语言	英语
页（从-至）	393-397
页数	5
期刊	Solar Energy
卷	86
期	1
DOI	https://doi.org/10.1016/j.solener.2011.10.015
出版状态	已出版 - 1月 2012

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10.1016/j.solener.2011.10.015

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title = "Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency",

abstract = "The p-type a-Si:H/n-type c-Si (P + a-Si:H/N + c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P + a-Si:H/N + c-Si solar cells. With the optimized parameters set, the P + a-Si:H/N + c-Si solar cell reaches a high efficiency (η) up to 21.849\% (FF: 0.866, V OC: 0.861V, J SC: 29.32mA/cm 2).",

keywords = "A-Si/c-Si heterojunction, Photovoltaics, Solar cells, TCO work function",

author = "Aqing Chen and Kaigui Zhu",

year = "2012",

month = jan,

doi = "10.1016/j.solener.2011.10.015",

language = "英语",

volume = "86",

pages = "393--397",

journal = "Solar Energy",

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AU - Chen, Aqing

AU - Zhu, Kaigui

PY - 2012/1

Y1 - 2012/1

N2 - The p-type a-Si:H/n-type c-Si (P + a-Si:H/N + c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P + a-Si:H/N + c-Si solar cells. With the optimized parameters set, the P + a-Si:H/N + c-Si solar cell reaches a high efficiency (η) up to 21.849% (FF: 0.866, V OC: 0.861V, J SC: 29.32mA/cm 2).

AB - The p-type a-Si:H/n-type c-Si (P + a-Si:H/N + c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P + a-Si:H/N + c-Si solar cells. With the optimized parameters set, the P + a-Si:H/N + c-Si solar cell reaches a high efficiency (η) up to 21.849% (FF: 0.866, V OC: 0.861V, J SC: 29.32mA/cm 2).

KW - A-Si/c-Si heterojunction

KW - Photovoltaics

KW - Solar cells

KW - TCO work function

UR - https://www.scopus.com/pages/publications/84855204494

U2 - 10.1016/j.solener.2011.10.015

DO - 10.1016/j.solener.2011.10.015

M3 - 文章

AN - SCOPUS:84855204494

SN - 0038-092X

VL - 86

SP - 393

EP - 397

JO - Solar Energy

JF - Solar Energy

IS - 1

ER -

Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency

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联合国可持续发展目标

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