Comprehensive understanding of the effect of electric dipole at high-k/ SiO2 interface on the flatband voltage shift in metal-oxide- semiconductor device

Xiaolei Wang; Kai Han; Wenwu Wang; Xueli Ma; Dapeng Chen; Jing Zhang; Jun Du; Yuhua Xiong; Anping Huang

doi:10.1063/1.3475774

Comprehensive understanding of the effect of electric dipole at high-k/ SiO₂ interface on the flatband voltage shift in metal-oxide- semiconductor device

Xiaolei Wang
, Kai Han
, Wenwu Wang^*
, Xueli Ma
, Dapeng Chen
, Jing Zhang
, Jun Du
, Yuhua Xiong
, Anping Huang

^*此作品的通讯作者

物理学院

CAS - Institute of Microelectronics
North China University of Technology
General Research Institute for Non-ferrous Metals China

科研成果: 期刊稿件 › 文章 › 同行评审

30 引用（Scopus）

摘要

Electrical characteristics of HfO₂ / SiO₂ interface are comprehensively studied to clarify the intrinsic origin of flatband voltage (VF_B) shift in metal-oxide-semiconductor (MOS) device with high-k/metal gate structure. A methodology for quantitative extraction of the interface dipole and chargers at high-k/ SiO₂ interface is proposed. The dipole and charges at HfO₂ / SiO₂ interface are extracted to be about -0.38 V and -1.15× 1013 cm-2, respectively. This result shows that the high density of negative charges at HfO₂ / SiO₂ interface rather than the interface dipole are the dominant cause of the positive VF_B shift in the MOS device with HfO ₂ / SiO₂ stack.

源语言	英语
文章编号	062901
期刊	Applied Physics Letters
卷	97
期	6
DOI	https://doi.org/10.1063/1.3475774
出版状态	已出版 - 9 8月 2010

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10.1063/1.3475774

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title = "Comprehensive understanding of the effect of electric dipole at high-k/ SiO2 interface on the flatband voltage shift in metal-oxide- semiconductor device",

abstract = "Electrical characteristics of HfO2 / SiO2 interface are comprehensively studied to clarify the intrinsic origin of flatband voltage (VFB) shift in metal-oxide-semiconductor (MOS) device with high-k/metal gate structure. A methodology for quantitative extraction of the interface dipole and chargers at high-k/ SiO2 interface is proposed. The dipole and charges at HfO2 / SiO2 interface are extracted to be about -0.38 V and -1.15× 1013 cm-2, respectively. This result shows that the high density of negative charges at HfO2 / SiO2 interface rather than the interface dipole are the dominant cause of the positive VFB shift in the MOS device with HfO 2 / SiO2 stack.",

author = "Xiaolei Wang and Kai Han and Wenwu Wang and Xueli Ma and Dapeng Chen and Jing Zhang and Jun Du and Yuhua Xiong and Anping Huang",

year = "2010",

month = aug,

day = "9",

doi = "10.1063/1.3475774",

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volume = "97",

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TY - JOUR

T1 - Comprehensive understanding of the effect of electric dipole at high-k/ SiO2 interface on the flatband voltage shift in metal-oxide- semiconductor device

AU - Wang, Xiaolei

AU - Han, Kai

AU - Wang, Wenwu

AU - Ma, Xueli

AU - Chen, Dapeng

AU - Zhang, Jing

AU - Du, Jun

AU - Xiong, Yuhua

AU - Huang, Anping

PY - 2010/8/9

Y1 - 2010/8/9

N2 - Electrical characteristics of HfO2 / SiO2 interface are comprehensively studied to clarify the intrinsic origin of flatband voltage (VFB) shift in metal-oxide-semiconductor (MOS) device with high-k/metal gate structure. A methodology for quantitative extraction of the interface dipole and chargers at high-k/ SiO2 interface is proposed. The dipole and charges at HfO2 / SiO2 interface are extracted to be about -0.38 V and -1.15× 1013 cm-2, respectively. This result shows that the high density of negative charges at HfO2 / SiO2 interface rather than the interface dipole are the dominant cause of the positive VFB shift in the MOS device with HfO 2 / SiO2 stack.

AB - Electrical characteristics of HfO2 / SiO2 interface are comprehensively studied to clarify the intrinsic origin of flatband voltage (VFB) shift in metal-oxide-semiconductor (MOS) device with high-k/metal gate structure. A methodology for quantitative extraction of the interface dipole and chargers at high-k/ SiO2 interface is proposed. The dipole and charges at HfO2 / SiO2 interface are extracted to be about -0.38 V and -1.15× 1013 cm-2, respectively. This result shows that the high density of negative charges at HfO2 / SiO2 interface rather than the interface dipole are the dominant cause of the positive VFB shift in the MOS device with HfO 2 / SiO2 stack.

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U2 - 10.1063/1.3475774

DO - 10.1063/1.3475774

M3 - 文章

AN - SCOPUS:77955745941

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062901

ER -

Comprehensive understanding of the effect of electric dipole at high-k/ SiO2 interface on the flatband voltage shift in metal-oxide- semiconductor device

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Comprehensive understanding of the effect of electric dipole at high-k/ SiO₂ interface on the flatband voltage shift in metal-oxide- semiconductor device