跳到主要导航 跳到搜索 跳到主要内容

Complementary magnon transistors by comb-shaped gating currents

  • Peng Chen
  • , Hanchen Wang
  • , Chen Cheng
  • , Caihua Wan
  • , Dalin Zhang
  • , Yuqiang Wang
  • , Yizhan Wang
  • , Wenqing He
  • , Boyuan Chi
  • , Yaowen Liu
  • , Guoqiang Yu
  • , Haiming Yu
  • , Xiufeng Han
  • CAS - Institute of Physics
  • University of Chinese Academy of Sciences
  • Beihang University
  • International Quantum Academy
  • Swiss Federal Institute of Technology Zurich
  • Tongji University
  • Songshan Lake Materials Laboratory

科研成果: 期刊稿件文章同行评审

摘要

Complementary magnon transistors (CMTs) are desired to effectively regulate the transport of coherent spin waves. Here, using comb-shaped gating electrodes with a variable duty ratio (δ) and a gating current flowing through them, we were able to decrease or even increase the transmission of spin waves in a wide frequency range complimentarily. The reduction or amplification degree at opposite gating currents depends on δ. We further found that interference between spin waves transmitted through the gated and ungated regions was responsible for the gate tunability at low δ; at high δ, the inhomogeneous temperature and magnetic fields introduced by the gating currents can nontrivially deflect spin waves and leads to an opposite gate tunability. Realization of the CMT based on a dc gating current may pave the way toward coherent magnon devices and circuits, spin-wave processing, or lensing applications.

源语言英语
文章编号054019
期刊Physical Review Applied
20
5
DOI
出版状态已出版 - 11月 2023

学术指纹

探究 'Complementary magnon transistors by comb-shaped gating currents' 的科研主题。它们共同构成独一无二的学术指纹。

引用此