Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate

H. Z. Xu; A. Bell; Z. G. Wang; Y. Okada; M. Kawabe; I. Harrison; C. T. Foxon

doi:10.1016/S0022-0248(00)00927-1

Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate

H. Z. Xu^*
, A. Bell
, Z. G. Wang
, Y. Okada
, M. Kawabe
, I. Harrison
, C. T. Foxon

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

28 引用（Scopus）

摘要

Undoped GaN epilayer on c-face (0 0 0 1) sapphire substrate has been grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal-type low-pressure two-channel reactor. Photoluminescence (PL) as a function of temperature and excitation intensity have been systematically studied, and the competition between near band gap ultraviolet (UV) and defect-related yellow luminescence (YL) has been extensively investigated. It is revealed that the ratio of the UV-to-YL peak intensities depends strongly on the excitation intensity and the measurement temperature. The obtained results have been analyzed in comparison with the theoretical predications based on a bimolecular model.

源语言	英语
页（从-至）	96-103
页数	8
期刊	Journal of Crystal Growth
卷	222
期	1-2
DOI	https://doi.org/10.1016/S0022-0248(00)00927-1
出版状态	已出版 - 1月 2001
已对外发布	是

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title = "Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate",

abstract = "Undoped GaN epilayer on c-face (0 0 0 1) sapphire substrate has been grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal-type low-pressure two-channel reactor. Photoluminescence (PL) as a function of temperature and excitation intensity have been systematically studied, and the competition between near band gap ultraviolet (UV) and defect-related yellow luminescence (YL) has been extensively investigated. It is revealed that the ratio of the UV-to-YL peak intensities depends strongly on the excitation intensity and the measurement temperature. The obtained results have been analyzed in comparison with the theoretical predications based on a bimolecular model.",

author = "Xu, \{H. Z.\} and A. Bell and Wang, \{Z. G.\} and Y. Okada and M. Kawabe and I. Harrison and Foxon, \{C. T.\}",

year = "2001",

month = jan,

doi = "10.1016/S0022-0248(00)00927-1",

language = "英语",

volume = "222",

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TY - JOUR

T1 - Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate

AU - Xu, H. Z.

AU - Bell, A.

AU - Wang, Z. G.

AU - Okada, Y.

AU - Kawabe, M.

AU - Harrison, I.

AU - Foxon, C. T.

PY - 2001/1

Y1 - 2001/1

N2 - Undoped GaN epilayer on c-face (0 0 0 1) sapphire substrate has been grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal-type low-pressure two-channel reactor. Photoluminescence (PL) as a function of temperature and excitation intensity have been systematically studied, and the competition between near band gap ultraviolet (UV) and defect-related yellow luminescence (YL) has been extensively investigated. It is revealed that the ratio of the UV-to-YL peak intensities depends strongly on the excitation intensity and the measurement temperature. The obtained results have been analyzed in comparison with the theoretical predications based on a bimolecular model.

AB - Undoped GaN epilayer on c-face (0 0 0 1) sapphire substrate has been grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal-type low-pressure two-channel reactor. Photoluminescence (PL) as a function of temperature and excitation intensity have been systematically studied, and the competition between near band gap ultraviolet (UV) and defect-related yellow luminescence (YL) has been extensively investigated. It is revealed that the ratio of the UV-to-YL peak intensities depends strongly on the excitation intensity and the measurement temperature. The obtained results have been analyzed in comparison with the theoretical predications based on a bimolecular model.

UR - https://www.scopus.com/pages/publications/0035156133

U2 - 10.1016/S0022-0248(00)00927-1

DO - 10.1016/S0022-0248(00)00927-1

M3 - 文章

AN - SCOPUS:0035156133

SN - 0022-0248

VL - 222

SP - 96

EP - 103

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate

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