Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter

Yushan Liu; Baoming Ge; Haitham Abu-Rub; Haiyu Zhang; Robert S. Balog

doi:10.1109/ECCE.2016.7854942

Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter

Yushan Liu
, Baoming Ge
, Haitham Abu-Rub
, Haiyu Zhang
, Robert S. Balog

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

9 引用（Scopus）

摘要

The wide band-gap Silicon Carbide (SiC) and gallium nitride (GaN) materials based semiconductor devices have attracted tremendous attentions in modern power electronics applications. They provide much higher switching frequency and higher junction temperature than silicon power devices, thus to significantly decrease the system volume and weight, especially on passive components. In this paper, the characteristics of the SiC and GaN materials and devices are overviewed. A front-end isolated quasi-Z-source cascade multilevel inverter (qZS-CMI) based Photovoltaic (PV) power system is proposed to insulate the PV array from high voltage grid and make possible of PV grounding, thus to enhance the system reliability and safety. The SiC and GaN devices applied to the front-end isolation of qZS inverter module are compared. Experimental results verify the proposed front-end isolated qZS-CMI and comparison results, demonstrating a competitive solution for the future development of such inverters.

源语言	英语
主期刊名	ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings
出版商	Institute of Electrical and Electronics Engineers Inc.
ISBN（电子版）	9781509007370
DOI	https://doi.org/10.1109/ECCE.2016.7854942
出版状态	已出版 - 2016
已对外发布	是
活动	2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016 - Milwaukee, 美国期限: 18 9月 2016 → 22 9月 2016

出版系列

姓名	ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings

会议

会议	2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016
国家/地区	美国
市	Milwaukee
时期	18/09/16 → 22/09/16

联合国可持续发展目标

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可持续发展目标 7 经济适用的清洁能源

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10.1109/ECCE.2016.7854942

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Liu, Y., Ge, B., Abu-Rub, H., Zhang, H., & Balog, R. S. (2016). Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter. 在 ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings 文章 7854942 (ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2016.7854942

Liu, Yushan ; Ge, Baoming ; Abu-Rub, Haitham 等. / Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter. ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. (ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings).

@inproceedings{0adc7e9f578d4ea7b3474bd7991bd29b,

title = "Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter",

abstract = "The wide band-gap Silicon Carbide (SiC) and gallium nitride (GaN) materials based semiconductor devices have attracted tremendous attentions in modern power electronics applications. They provide much higher switching frequency and higher junction temperature than silicon power devices, thus to significantly decrease the system volume and weight, especially on passive components. In this paper, the characteristics of the SiC and GaN materials and devices are overviewed. A front-end isolated quasi-Z-source cascade multilevel inverter (qZS-CMI) based Photovoltaic (PV) power system is proposed to insulate the PV array from high voltage grid and make possible of PV grounding, thus to enhance the system reliability and safety. The SiC and GaN devices applied to the front-end isolation of qZS inverter module are compared. Experimental results verify the proposed front-end isolated qZS-CMI and comparison results, demonstrating a competitive solution for the future development of such inverters.",

keywords = "Silicon carbide, cascade multilevel inverter, efficiency, gallium nitride, quasi-Z-source inverter",

author = "Yushan Liu and Baoming Ge and Haitham Abu-Rub and Haiyu Zhang and Balog, \{Robert S.\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016 ; Conference date: 18-09-2016 Through 22-09-2016",

year = "2016",

doi = "10.1109/ECCE.2016.7854942",

language = "英语",

series = "ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings",

address = "美国",

}

Liu, Y, Ge, B, Abu-Rub, H, Zhang, H & Balog, RS 2016, Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter. 在 ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings., 7854942, ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016, Milwaukee, 美国, 18/09/16. https://doi.org/10.1109/ECCE.2016.7854942

Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter. / Liu, Yushan; Ge, Baoming; Abu-Rub, Haitham 等.
ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. 7854942 (ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter

AU - Liu, Yushan

AU - Ge, Baoming

AU - Abu-Rub, Haitham

AU - Zhang, Haiyu

AU - Balog, Robert S.

PY - 2016

Y1 - 2016

N2 - The wide band-gap Silicon Carbide (SiC) and gallium nitride (GaN) materials based semiconductor devices have attracted tremendous attentions in modern power electronics applications. They provide much higher switching frequency and higher junction temperature than silicon power devices, thus to significantly decrease the system volume and weight, especially on passive components. In this paper, the characteristics of the SiC and GaN materials and devices are overviewed. A front-end isolated quasi-Z-source cascade multilevel inverter (qZS-CMI) based Photovoltaic (PV) power system is proposed to insulate the PV array from high voltage grid and make possible of PV grounding, thus to enhance the system reliability and safety. The SiC and GaN devices applied to the front-end isolation of qZS inverter module are compared. Experimental results verify the proposed front-end isolated qZS-CMI and comparison results, demonstrating a competitive solution for the future development of such inverters.

AB - The wide band-gap Silicon Carbide (SiC) and gallium nitride (GaN) materials based semiconductor devices have attracted tremendous attentions in modern power electronics applications. They provide much higher switching frequency and higher junction temperature than silicon power devices, thus to significantly decrease the system volume and weight, especially on passive components. In this paper, the characteristics of the SiC and GaN materials and devices are overviewed. A front-end isolated quasi-Z-source cascade multilevel inverter (qZS-CMI) based Photovoltaic (PV) power system is proposed to insulate the PV array from high voltage grid and make possible of PV grounding, thus to enhance the system reliability and safety. The SiC and GaN devices applied to the front-end isolation of qZS inverter module are compared. Experimental results verify the proposed front-end isolated qZS-CMI and comparison results, demonstrating a competitive solution for the future development of such inverters.

KW - Silicon carbide

KW - cascade multilevel inverter

KW - efficiency

KW - gallium nitride

KW - quasi-Z-source inverter

UR - https://www.scopus.com/pages/publications/85015425337

U2 - 10.1109/ECCE.2016.7854942

DO - 10.1109/ECCE.2016.7854942

M3 - 会议稿件

AN - SCOPUS:85015425337

T3 - ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings

BT - ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016

Y2 - 18 September 2016 through 22 September 2016

ER -

Liu Y, Ge B, Abu-Rub H, Zhang H, Balog RS. Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter. 在 ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. 7854942. (ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings). doi: 10.1109/ECCE.2016.7854942

Comparison of SiC and GaN devices for front-end isolation of quasi-Z-source cascaded multilevel photovoltaic inverter

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联合国可持续发展目标

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