Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature

Xiaodi Jin; Guangsheng Liang; Markus Muller; Michael Schroter

doi:10.1109/TED.2023.3297564

Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature

Xiaodi Jin^*
, Guangsheng Liang
, Markus Muller
, Michael Schroter

^*此作品的通讯作者

Technische Universität Dresden

科研成果: 期刊稿件 › 文章 › 同行评审

9 引用（Scopus）

摘要

The thermal resistance Rth of SiGe heterojunction bipolar transistors (HBTs) is characterized and modeled at cryogenic temperatures up to room temperature (RT). A physics-based analytical solution for the thermal resistance has been derived for this wide temperature range. Two formulations including both chuck temperature and power dependence of Rth have been developed and show good agreement with data from both 3-D thermal simulation and measurements.

源语言	英语
页（从-至）	4800-4807
页数	8
期刊	IEEE Transactions on Electron Devices
卷	70
期	9
DOI	https://doi.org/10.1109/TED.2023.3297564
出版状态	已出版 - 1 9月 2023
已对外发布	是

访问文件

10.1109/TED.2023.3297564

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{618374a62e6441f6a96d12005a2ec44b,

title = "Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature",

abstract = "The thermal resistance Rth of SiGe heterojunction bipolar transistors (HBTs) is characterized and modeled at cryogenic temperatures up to room temperature (RT). A physics-based analytical solution for the thermal resistance has been derived for this wide temperature range. Two formulations including both chuck temperature and power dependence of Rth have been developed and show good agreement with data from both 3-D thermal simulation and measurements.",

keywords = "Compact modeling, cryogenic operation, heterojunction bipolar transistor (HBT), low-temperature electronics, thermal resistance",

author = "Xiaodi Jin and Guangsheng Liang and Markus Muller and Michael Schroter",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2023",

month = sep,

day = "1",

doi = "10.1109/TED.2023.3297564",

language = "英语",

volume = "70",

pages = "4800--4807",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature

AU - Jin, Xiaodi

AU - Liang, Guangsheng

AU - Muller, Markus

AU - Schroter, Michael

PY - 2023/9/1

Y1 - 2023/9/1

N2 - The thermal resistance Rth of SiGe heterojunction bipolar transistors (HBTs) is characterized and modeled at cryogenic temperatures up to room temperature (RT). A physics-based analytical solution for the thermal resistance has been derived for this wide temperature range. Two formulations including both chuck temperature and power dependence of Rth have been developed and show good agreement with data from both 3-D thermal simulation and measurements.

AB - The thermal resistance Rth of SiGe heterojunction bipolar transistors (HBTs) is characterized and modeled at cryogenic temperatures up to room temperature (RT). A physics-based analytical solution for the thermal resistance has been derived for this wide temperature range. Two formulations including both chuck temperature and power dependence of Rth have been developed and show good agreement with data from both 3-D thermal simulation and measurements.

KW - Compact modeling

KW - cryogenic operation

KW - heterojunction bipolar transistor (HBT)

KW - low-temperature electronics

KW - thermal resistance

UR - https://www.scopus.com/pages/publications/85166748813

U2 - 10.1109/TED.2023.3297564

DO - 10.1109/TED.2023.3297564

M3 - 文章

AN - SCOPUS:85166748813

SN - 0018-9383

VL - 70

SP - 4800

EP - 4807

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature

摘要

访问文件

其它文件与链接

指纹

引用此