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Calculation and comparison of thermal effect in laser diode pumped slab lasers with different pumping structures

  • Feng Huang*
  • , Nan Jiang
  • , Yuefeng Wang
  • , Wei Dong
  • , Yanxiong Niu
  • *此作品的通讯作者
  • Ordnance Engineering College

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

Laser diode (LD) pumped slab laser, as an important high average power solid-state laser, is a promising laser source in military and industrial fields. The different laser diode pumping structures lead to different thermal effect in the slab gain medium. The thermal and stress analysis of slab laser with different pumping structure are performed by finite element analysis (FEA) with the software program ANSYS. The calculation results show that the face pumped and cooled laser results in a near one-dimension temperature distribution and eliminates thermal stress induced depolarization. But the structure is low pump efficiency due to the small thickness of slabs and the requirement to cool and pump through the same faces. End-pumped slab laser is high pump efficiency and excellent mode match, but its pumping arrangement is fairly complicated. The edge-pumped face-cooling slab laser's pump efficiency is better than face-pumping, and its pumping structure is simpler than end-pumped laser, but the tensile stress on surfaces may initiate failure of the gain medium so it is important to design so that the stress is well below the stress fracture limit. The comparison of the thermal effects with different pumping structure shows that, the edge-pumped slab laser has engineering advantages in high power slab laser's application. Furthermore, the end-pumped slab laser tends to get the best beam quality, so it is fit for the application which has a special requirement on laser beam quality.

源语言英语
主期刊名Semiconductor Lasers and Applications III
DOI
出版状态已出版 - 2008
已对外发布
活动Semiconductor Lasers and Applications III - Beijing, 中国
期限: 12 11月 200713 11月 2007

出版系列

姓名Proceedings of SPIE - The International Society for Optical Engineering
6824
ISSN(印刷版)0277-786X

会议

会议Semiconductor Lasers and Applications III
国家/地区中国
Beijing
时期12/11/0713/11/07

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