TY - JOUR
T1 - Bandwidth Characteristics of Mid-Wavelength Infrared PIN HgCdTe Avalanche Photodiodes
AU - Gu, Yue
AU - Xie, Runzhang
AU - Wang, Peng
AU - Li, Qing
AU - Zou, Yuanchen
AU - Liu, Shuning
AU - Zhang, Kun
AU - Wang, Yang
AU - Wang, Hailu
AU - Wang, Fang
AU - Chen, Lu
AU - Hu, Weida
N1 - Publisher Copyright:
© 1965-2012 IEEE.
PY - 2023/4/1
Y1 - 2023/4/1
N2 - HgCdTe avalanche photodiodes (APDs) are used in mid-wavelength infrared (MWIR) photoelectric detectors in free-space optical communication, three-dimensional light detection, and ranging. Although HgCdTe has a small electronic effective mass and high mobility, there is a gap between the actual bandwidth of the device and the theoretical limit, and it is important to analyze the carrier transport mechanism in these devices. A two-dimensional finite element model is used to analyze the carrier transport mechanism for different device structures and bias voltages. The structural parameters of the device are optimized on the basis of a comprehensive determination of its bandwidth characteristics. Experimental data and calculation results are found to be consistent. This structural optimization increases the device bandwidth from 27.1 MHz to 553 MHz, with a gain-normalized dark current density (GNDCD) of less than 10-6 A/cm2. The results obtained here can provide guidance for the design of high-speed HgCdTe devices.
AB - HgCdTe avalanche photodiodes (APDs) are used in mid-wavelength infrared (MWIR) photoelectric detectors in free-space optical communication, three-dimensional light detection, and ranging. Although HgCdTe has a small electronic effective mass and high mobility, there is a gap between the actual bandwidth of the device and the theoretical limit, and it is important to analyze the carrier transport mechanism in these devices. A two-dimensional finite element model is used to analyze the carrier transport mechanism for different device structures and bias voltages. The structural parameters of the device are optimized on the basis of a comprehensive determination of its bandwidth characteristics. Experimental data and calculation results are found to be consistent. This structural optimization increases the device bandwidth from 27.1 MHz to 553 MHz, with a gain-normalized dark current density (GNDCD) of less than 10-6 A/cm2. The results obtained here can provide guidance for the design of high-speed HgCdTe devices.
KW - HgCdTe avalanche photodiodes
KW - bandwidth characteristic
KW - gain normalized dark current density
KW - mid-wavelength infrared
UR - https://www.scopus.com/pages/publications/85147313723
U2 - 10.1109/JQE.2023.3237242
DO - 10.1109/JQE.2023.3237242
M3 - 文章
AN - SCOPUS:85147313723
SN - 0018-9197
VL - 59
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
IS - 2
M1 - 4500106
ER -