@inproceedings{a4cbc9498095430d8b713d62109745e2,
title = "Au-Si eutectic wafer bonding mechanism analysis and a intensity model",
abstract = "Our experiments highlight that gold-silicon eutectics are fairly influenced by the thickness of Au layer and the wastage of Si, i.e. the wasting thickness of the silicon die. In the experiments, a bonding intensity testing method, called Press-arm model, is used to verify the Au-Si eutectics bonding strength. Through the intensity value of the bonding interface, we analyze the eutectics condition of the bonding interface at different temperatures and discuss the optimum procession of the wafer capsulation.",
keywords = "Au-Si, Eutectic bonding, Strength test, Wafer",
author = "X. Wang and D. Zhang and J. Li and Z. You and B. Cai",
year = "2007",
doi = "10.4028/3-908451-30-2.575",
language = "英语",
isbn = "3908451302",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
number = "PART 1",
pages = "575--578",
booktitle = "Nanoscience and Technology",
address = "瑞士",
edition = "PART 1",
note = "China International Conference on Nanoscience and Technology, ChinaNANO 2005 ; Conference date: 09-06-2005 Through 11-06-2005",
}