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Atomic Resolution Interfacial Structure of Lead-free Ferroelectric K0.5Na0.5NbO3 Thin films Deposited on SrTiO3

  • Chao Li
  • , Lingyan Wang*
  • , Zhao Wang
  • , Yaodong Yang
  • , Wei Ren
  • , Guang Yang
  • *此作品的通讯作者
  • Xi'an Jiaotong University

科研成果: 期刊稿件文章同行评审

摘要

Oxide interface engineering has attracted considerable attention since the discovery of its exotic properties induced by lattice strain, dislocation and composition change at the interface. In this paper, the atomic resolution structure and composition of the interface between the lead-free piezoelectric (K0.5Na0.5)NbO3 (KNN) thin films and single-crystalline SrTiO3 substrate were investigated by means of scanning transmission electron microscopy (STEM) combining with electron energy loss spectroscopy (EELS). A sharp epitaxial interface was observed to be a monolayer composed of Nb and Ti cations with a ratio of 3/1. The First-Principles Calculations indicated the interface monolayer showed different electronic structure and played the vital role in the asymmetric charge distribution of KNN thin films near the interface. We also observed the gradual relaxation process for the relatively large lattice strains near the KNN/STO interface, which remarks a good structure modulation behavior of KNN thin films via strain engineering.

源语言英语
文章编号37788
期刊Scientific Reports
6
DOI
出版状态已出版 - 25 11月 2016
已对外发布

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