Application of a apparatus increasing magnetic field in magnetron R. F. depositing films

To increase deposition rate of R. F. sputtering, this paper has reported an apparatus, with which magnetron sputtering installation has been equipped. Experimental results have shown that without changing original installation and with using identical sputtering parameters, relying on the apparatus can make deposition rate effectively increase. Ratio of deposition rates of films prepared with the apparatus to deposition rates of films deposited without it is about 4:1. Therefore, the apparatus provides a simple, convenient and novel method that can effectively economize on sputtering time and improve prepared film structure.