Annealing-induced changes in electrical characteristics of Al/Al-rich Al2O3/p-Si Diodes

Zhen Liu; T. P. Chen; Yang Liu; Zhan Hong Cen; Shu Zhu; Ming Yang; Jen It Wong; Yi Bin Li; Sam Zhang

doi:10.1109/TED.2010.2089461

Annealing-induced changes in electrical characteristics of Al/Al-rich Al₂O₃/p-Si Diodes

Zhen Liu^*
, T. P. Chen
, Yang Liu
, Zhan Hong Cen
, Shu Zhu
, Ming Yang
, Jen It Wong
, Yi Bin Li
, Sam Zhang

^*此作品的通讯作者

Nanyang Technological University
University of Electronic Science and Technology of China
Harbin Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

Al-rich Al₂O₃ thin films are synthesized by radio-frequency magnetron sputtering, followed by thermal annealing at 500 °C for different durations to form Al/Al-rich Al₂O ₃/_p-Sidiodes. The annealing causes reactions at the Al-rich Al₂O₃/Si interface, leading to an increase in Al concentration in the interface region. As a result, the current conduction of the diode is significantly enhanced, which results in anomalous capacitancevoltage (C-V) characteristics. The anomalous behaviors can be eliminated by reconstructing the C-V curve based on a four-element circuit model. The resistance of the Al-rich Al₂O₃; layer extracted from the C-V reconstruction shows power-law voltage dependence correlated with the current-conduction measurement.

源语言	英语
文章编号	5648458
页（从-至）	33-38
页数	6
期刊	IEEE Transactions on Electron Devices
卷	58
期	1
DOI	https://doi.org/10.1109/TED.2010.2089461
出版状态	已出版 - 1月 2011
已对外发布	是

访问文件

10.1109/TED.2010.2089461

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{9a027c5d5c834c8f8a4555914d946c50,

title = "Annealing-induced changes in electrical characteristics of Al/Al-rich Al2O3/p-Si Diodes",

abstract = "Al-rich Al2O3 thin films are synthesized by radio-frequency magnetron sputtering, followed by thermal annealing at 500 °C for different durations to form Al/Al-rich Al2O 3/p-Sidiodes. The annealing causes reactions at the Al-rich Al2O3/Si interface, leading to an increase in Al concentration in the interface region. As a result, the current conduction of the diode is significantly enhanced, which results in anomalous capacitancevoltage (C-V) characteristics. The anomalous behaviors can be eliminated by reconstructing the C-V curve based on a four-element circuit model. The resistance of the Al-rich Al2O3; layer extracted from the C-V reconstruction shows power-law voltage dependence correlated with the current-conduction measurement.",

keywords = "Aluminum-rich aluminum oxide, annealing effect, capacitance-voltage characteristics, current-voltage characteristics, diode memory, metal-insulator-semiconductor (MIS) diodes",

author = "Zhen Liu and Chen, \{T. P.\} and Yang Liu and Cen, \{Zhan Hong\} and Shu Zhu and Ming Yang and Wong, \{Jen It\} and Li, \{Yi Bin\} and Sam Zhang",

year = "2011",

month = jan,

doi = "10.1109/TED.2010.2089461",

language = "英语",

volume = "58",

pages = "33--38",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Annealing-induced changes in electrical characteristics of Al/Al-rich Al2O3/p-Si Diodes

AU - Liu, Zhen

AU - Chen, T. P.

AU - Liu, Yang

AU - Cen, Zhan Hong

AU - Zhu, Shu

AU - Yang, Ming

AU - Wong, Jen It

AU - Li, Yi Bin

AU - Zhang, Sam

PY - 2011/1

Y1 - 2011/1

N2 - Al-rich Al2O3 thin films are synthesized by radio-frequency magnetron sputtering, followed by thermal annealing at 500 °C for different durations to form Al/Al-rich Al2O 3/p-Sidiodes. The annealing causes reactions at the Al-rich Al2O3/Si interface, leading to an increase in Al concentration in the interface region. As a result, the current conduction of the diode is significantly enhanced, which results in anomalous capacitancevoltage (C-V) characteristics. The anomalous behaviors can be eliminated by reconstructing the C-V curve based on a four-element circuit model. The resistance of the Al-rich Al2O3; layer extracted from the C-V reconstruction shows power-law voltage dependence correlated with the current-conduction measurement.

AB - Al-rich Al2O3 thin films are synthesized by radio-frequency magnetron sputtering, followed by thermal annealing at 500 °C for different durations to form Al/Al-rich Al2O 3/p-Sidiodes. The annealing causes reactions at the Al-rich Al2O3/Si interface, leading to an increase in Al concentration in the interface region. As a result, the current conduction of the diode is significantly enhanced, which results in anomalous capacitancevoltage (C-V) characteristics. The anomalous behaviors can be eliminated by reconstructing the C-V curve based on a four-element circuit model. The resistance of the Al-rich Al2O3; layer extracted from the C-V reconstruction shows power-law voltage dependence correlated with the current-conduction measurement.

KW - Aluminum-rich aluminum oxide

KW - annealing effect

KW - capacitance-voltage characteristics

KW - current-voltage characteristics

KW - diode memory

KW - metal-insulator-semiconductor (MIS) diodes

UR - https://www.scopus.com/pages/publications/78650899524

U2 - 10.1109/TED.2010.2089461

DO - 10.1109/TED.2010.2089461

M3 - 文章

AN - SCOPUS:78650899524

SN - 0018-9383

VL - 58

SP - 33

EP - 38

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

M1 - 5648458

ER -

Annealing-induced changes in electrical characteristics of Al/Al-rich Al2O3/p-Si Diodes

摘要

访问文件

其它文件与链接

指纹

引用此

Annealing-induced changes in electrical characteristics of Al/Al-rich Al₂O₃/p-Si Diodes