Analyzing the Joint Effect of PIN Diode Parameters on Spike Leakage towards HPM Protection

PIN diode limiters protect RF systems from high-power microwave threats but suffer from transient spike leakage, risking device damage. This paper systematically explores how carrier lifetime τ, junction capacitance C_j package inductance L_p, I-layer width w, and the carrier frequency f_c jointly govern leakage via ADS-based simulations. It is revealed that spike leakage is minimized at the C_j - L_p resonant frequency f₀ = 1/(2 π √ C_j L_p). while deviations from f₀ signify dependencies on τ and w. These findings potentially provide guidelines for designing robust and frequency-tailored protection circuits.