TY - JOUR
T1 - Analysis of Multivalley Phenomena in InP/GaAsSb DHBTs Using the Boltzmann Transport Equation
AU - Kazantsev, Viktor
AU - Muller, Markus
AU - Leenders, Hendrik
AU - Faibt, Josephine
AU - Jin, Xiaodi
AU - Hamzeloui, Sara
AU - Bolognesi, Colombo R.
AU - Jungemann, Christoph
AU - Schroter, Michael
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2025
Y1 - 2025
N2 - Electron transport in an indium phosphide (InP)/GaAsSb double heterojunction bipolar transistor (DHBT) is investigated by means of self-consistent Boltzmann transport equation (BTE) simulations. For this purpose, the doping profile and material parameters were calibrated to measurement data of a reference technology, leading to very good agreement between simulated and measured terminal characteristics. A rigorous analysis of the transit time components reveals a dominant role of base (τmB) and BC depletion region transit time (τBCi). It is shown that intervalley transfer (ivt) between Γ and L valley significantly increases τmB, a useful insight for future technology optimization. Small-signal analysis is leveraged to understand the fundamental high-frequency limitations of the technology.
AB - Electron transport in an indium phosphide (InP)/GaAsSb double heterojunction bipolar transistor (DHBT) is investigated by means of self-consistent Boltzmann transport equation (BTE) simulations. For this purpose, the doping profile and material parameters were calibrated to measurement data of a reference technology, leading to very good agreement between simulated and measured terminal characteristics. A rigorous analysis of the transit time components reveals a dominant role of base (τmB) and BC depletion region transit time (τBCi). It is shown that intervalley transfer (ivt) between Γ and L valley significantly increases τmB, a useful insight for future technology optimization. Small-signal analysis is leveraged to understand the fundamental high-frequency limitations of the technology.
KW - Boltzmann transport equation (BTE)
KW - double heterojunction bipolar transistor (DHBT)
KW - drift-diffusion
KW - GaAsSb
KW - III-V semiconductors
KW - intervalley transfer (ivt)
KW - modeling
KW - negative-differential mobility (NDM)
KW - TCAD
UR - https://www.scopus.com/pages/publications/105004667205
U2 - 10.1109/TED.2025.3563813
DO - 10.1109/TED.2025.3563813
M3 - 文章
AN - SCOPUS:105004667205
SN - 0018-9383
VL - 72
SP - 2898
EP - 2905
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
ER -