Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

Yijiao Wang; Xiaoyan Liu; Yunxiang Yang; Jieyu Qin; Gang Du; Jinfeng Kang

doi:10.1109/ICSICT.2012.6466747

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

Yijiao Wang^*
, Xiaoyan Liu
, Yunxiang Yang
, Jieyu Qin
, Gang Du
, Jinfeng Kang

^*此作品的通讯作者

Peking University

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

The electrostatic crosstalk in the 3D vertical CTM (Charge Trapping Memory) NAND NVM is investigated with various typical operation conditions. The junctionless FET of GAA (Gate-All-Around) nanowire with O/N/O (Oxide/Nitride/Oxide) dielectrics is simulated as the storage cell. The electrostatic properties of two neighbor cells of a NAND string are evaluated under typical conditions corresponding to the program operation. The results are help to design and optimize the new structures of 3D CTM NAND Flash.

源语言	英语
主期刊名	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOI	https://doi.org/10.1109/ICSICT.2012.6466747
出版状态	已出版 - 2012
已对外发布	是
活动	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, 中国期限: 29 10月 2012 → 1 11月 2012

出版系列

姓名	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

会议

会议	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
国家/地区	中国
市	Xi'an
时期	29/10/12 → 1/11/12

访问文件

10.1109/ICSICT.2012.6466747

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引用此

Wang, Y., Liu, X., Yang, Y., Qin, J., Du, G., & Kang, J. (2012). Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET. 在 ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings 文章 6466747 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6466747

Wang, Yijiao ; Liu, Xiaoyan ; Yang, Yunxiang 等. / Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET. ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{277fba5b2f8f4f23a92d675360649059,

title = "Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET",

abstract = "The electrostatic crosstalk in the 3D vertical CTM (Charge Trapping Memory) NAND NVM is investigated with various typical operation conditions. The junctionless FET of GAA (Gate-All-Around) nanowire with O/N/O (Oxide/Nitride/Oxide) dielectrics is simulated as the storage cell. The electrostatic properties of two neighbor cells of a NAND string are evaluated under typical conditions corresponding to the program operation. The results are help to design and optimize the new structures of 3D CTM NAND Flash.",

author = "Yijiao Wang and Xiaoyan Liu and Yunxiang Yang and Jieyu Qin and Gang Du and Jinfeng Kang",

year = "2012",

doi = "10.1109/ICSICT.2012.6466747",

language = "英语",

isbn = "9781467324724",

series = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

}

Wang, Y, Liu, X, Yang, Y, Qin, J, Du, G & Kang, J 2012, Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET. 在 ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6466747, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, 中国, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6466747

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET. / Wang, Yijiao; Liu, Xiaoyan; Yang, Yunxiang 等.
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6466747 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

AU - Wang, Yijiao

AU - Liu, Xiaoyan

AU - Yang, Yunxiang

AU - Qin, Jieyu

AU - Du, Gang

AU - Kang, Jinfeng

PY - 2012

Y1 - 2012

N2 - The electrostatic crosstalk in the 3D vertical CTM (Charge Trapping Memory) NAND NVM is investigated with various typical operation conditions. The junctionless FET of GAA (Gate-All-Around) nanowire with O/N/O (Oxide/Nitride/Oxide) dielectrics is simulated as the storage cell. The electrostatic properties of two neighbor cells of a NAND string are evaluated under typical conditions corresponding to the program operation. The results are help to design and optimize the new structures of 3D CTM NAND Flash.

AB - The electrostatic crosstalk in the 3D vertical CTM (Charge Trapping Memory) NAND NVM is investigated with various typical operation conditions. The junctionless FET of GAA (Gate-All-Around) nanowire with O/N/O (Oxide/Nitride/Oxide) dielectrics is simulated as the storage cell. The electrostatic properties of two neighbor cells of a NAND string are evaluated under typical conditions corresponding to the program operation. The results are help to design and optimize the new structures of 3D CTM NAND Flash.

UR - https://www.scopus.com/pages/publications/84874821352

U2 - 10.1109/ICSICT.2012.6466747

DO - 10.1109/ICSICT.2012.6466747

M3 - 会议稿件

AN - SCOPUS:84874821352

SN - 9781467324724

T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

Y2 - 29 October 2012 through 1 November 2012

ER -

Wang Y, Liu X, Yang Y, Qin J, Du G, Kang J. Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET. 在 ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6466747. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2012.6466747

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

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