TY - GEN
T1 - An ISFET Pixel with Integrated Trapped Charge Compensation using Temperature Feedback
AU - Moser, Nicolas
AU - Petrou, Loukas
AU - Hu, Yuanqi
AU - Georgiou, Pantelis
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/4/26
Y1 - 2018/4/26
N2 - This paper introduces the use of a diode-connected MOSFET as a temperature controlled switch for trapped charge cancellation of ISFET sensors. The current flowing through the reverse-biased diodes of 2.7 aA is negligible at low temperature but reaches 23 fA when heated to 100 ° C, which allows for low temperature readout and high temperature compensation of trapped charge. The diode-connected device is tied to the floating gate of the ISFET which is integrated as part of a source-follower readout. The in-pixel feedback loop uses a comparator to turn off the polysilicon heaters once the offset has been cancelled, triggering the readout by switching the op amp into a buffer configuration. Simulations show that the system is calibrated in 35s and the output sensitivity reaches 27.74 mV/pH. The pixel output then tracks any ionic change at its surface without sensor offset.
AB - This paper introduces the use of a diode-connected MOSFET as a temperature controlled switch for trapped charge cancellation of ISFET sensors. The current flowing through the reverse-biased diodes of 2.7 aA is negligible at low temperature but reaches 23 fA when heated to 100 ° C, which allows for low temperature readout and high temperature compensation of trapped charge. The diode-connected device is tied to the floating gate of the ISFET which is integrated as part of a source-follower readout. The in-pixel feedback loop uses a comparator to turn off the polysilicon heaters once the offset has been cancelled, triggering the readout by switching the op amp into a buffer configuration. Simulations show that the system is calibrated in 35s and the output sensitivity reaches 27.74 mV/pH. The pixel output then tracks any ionic change at its surface without sensor offset.
UR - https://www.scopus.com/pages/publications/85057128180
U2 - 10.1109/ISCAS.2018.8351358
DO - 10.1109/ISCAS.2018.8351358
M3 - 会议稿件
AN - SCOPUS:85057128180
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
Y2 - 27 May 2018 through 30 May 2018
ER -