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An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

  • C. Gould*
  • , S. Mark
  • , K. Pappert
  • , R. G. Dengel
  • , J. Wenisch
  • , R. P. Campion
  • , A. W. Rushforth
  • , D. Chiba
  • , Z. Li
  • , X. Liu
  • , W. Van Roy
  • , H. Ohno
  • , J. K. Furdyna
  • , B. Gallagher
  • , K. Brunner
  • , G. Schmidt
  • , L. W. Molenkamp
  • *此作品的通讯作者
  • University of Würzburg
  • University of Nottingham
  • Japan Science and Technology Agency
  • Tohoku University
  • Interuniversitair Micro-Elektronica Centrum
  • University of Notre Dame

科研成果: 期刊稿件文章同行评审

摘要

This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify the contributions of the various higher-order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers.

源语言英语
文章编号055007
期刊New Journal of Physics
10
DOI
出版状态已出版 - 23 5月 2008
已对外发布

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