An Electrical Behavior Analysis Method of Esd Protection Structure in Chip Based on Spice

With the continued scaling of integrated circuits (ICs), strong electrostatic-discharge (ESD) protection is increasingly essential for device reliability. This paper presents a method for analyzing the behavior of SCR-based protection structures using SPICE. The workflow is driven by Transmission Line Pulse (TLP) measurements, which are used to characterize the electrical behavior and to set up the simulations. Key metrics such as triggering voltage, holding voltage, and snap-back are examined through both experiments and SPICE. The SiliconControlled Rectifier (SCR) device is used as the representative protection structure, known for its reliable and efficient performance. The proposed methodology provides a practical framework for simulation and experimental verification, supporting the design and optimization of ESD protection in ICs. In particular, hybrid SPICE models are shown to capture the overall protection performance of SCR structures. The analysis also offers a systematic process for comparing and balancing alternative ESD solutions, providing a reliable basis for optimization in semiconductor device and packaging design.