An E-Band Frequency Quadrupler With Temperature Compensation Technique in 28-nm Bulk CMOS

This letter presents an E-band frequency quadrupler (FQ) implemented in 28-nm CMOS, featuring advanced temperature compensation to ensure consistent performance across a wide range of temperatures. The design employs dynamic adjustment of the push–push (PP) core’s transconductance (g_m) and the injection-locked (IL) core’s variable capacitance, achieving stable output power and frequency from −45 ◦C to 125 ◦C. By combining PP and IL architectures, the quadrupler achieves high efficiency (η) and power-added efficiency (PAE) with a small core area of 345 × 270 µm² . The measurement results demonstrate a 94% reduction in conversion gain (CG) variation, from 8.10 to 0.53 dB, and a peak CG of 4.58 dB at 80.9 GHz.