TY - GEN
T1 - Advanced Spin Orbit Torque Magnetic Random Access Memory with Field-Free Switching Schemes (Invited)
AU - Wang, Chao
AU - Wang, Zhaohao
AU - Peng, Shouzhong
AU - Zhang, Youguang
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/11/3
Y1 - 2020/11/3
N2 - Magnetic random access memory (MRAM) is considered a promising candidate for future both standalone and embedded memory technology. The emerging spin orbit torque (SOT) mechanism is expected to alternate the traditional spin transfer torque (STT) writing scheme. However, the need of undesirable magnetic field limits the application of SOT mechanism. In this invited paper, we outline our latest achievements on the field-free SOT-MRAM. First, we proposed a toggle spin torque MRAM (TST-MRAM) by combining STT and SOT. Second, we experimentally demonstrated a voltage-gated SOT mechanism assisted by voltage-controlled magnetic anisotropy (VCMA) and in-plane exchange bias (EB). Finally, we presented a current-path-dependent SOT mechanism aided by uniaxial shape anisotropy.
AB - Magnetic random access memory (MRAM) is considered a promising candidate for future both standalone and embedded memory technology. The emerging spin orbit torque (SOT) mechanism is expected to alternate the traditional spin transfer torque (STT) writing scheme. However, the need of undesirable magnetic field limits the application of SOT mechanism. In this invited paper, we outline our latest achievements on the field-free SOT-MRAM. First, we proposed a toggle spin torque MRAM (TST-MRAM) by combining STT and SOT. Second, we experimentally demonstrated a voltage-gated SOT mechanism assisted by voltage-controlled magnetic anisotropy (VCMA) and in-plane exchange bias (EB). Finally, we presented a current-path-dependent SOT mechanism aided by uniaxial shape anisotropy.
UR - https://www.scopus.com/pages/publications/85099175774
U2 - 10.1109/ICSICT49897.2020.9278375
DO - 10.1109/ICSICT49897.2020.9278375
M3 - 会议稿件
AN - SCOPUS:85099175774
T3 - 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings
BT - 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings
A2 - Yu, Shaofeng
A2 - Zhu, Xiaona
A2 - Tang, Ting-Ao
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020
Y2 - 3 November 2020 through 6 November 2020
ER -