TY - GEN
T1 - Advanced low power spintronic memories beyond STT-MRAM
AU - Kang, Wang
AU - Wang, Zhaohao
AU - Zhang, He
AU - Li, Sai
AU - Zhang, Youguang
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2017 ACM.
PY - 2017/5/10
Y1 - 2017/5/10
N2 - Until now, spin transfer torque magnetic random access memory (STT-MRAM) has drawn considerable R&D interest worldwide. A number of companies and universities are currently involved in this promising technology. In 2016, Everspin released the first 256M STT-MRAM chip, indicating the commercialization and application of STT-MRAM. Nevertheless, STT-MRAM still has some intrinsic limitations, such as dynamic write power and speed, compared with CMOS-based memory technologies. Following the technical evolution process from toggle-MRAM to STT-MRAM, the continuous pursuit of high performance, high density, low power and scalability, drives the intensive R&D of new memory technologies. In this paper, we will show the recent progress in advanced spintronic memories beyond STT-MRAM, such as the spin Hall effect (SHE)-driven and voltage-driven MRAMs. These advanced MRAM technologies do have some unique advantages compared with STT-MRAM, but they also suffer from new design and fabrication challenges. In addition, we will present the latest research in emerging spintronic devices, e.g., magnetic skyrmions, which are potential as information carriers in future spintronic memories, e.g., racetrack memory.
AB - Until now, spin transfer torque magnetic random access memory (STT-MRAM) has drawn considerable R&D interest worldwide. A number of companies and universities are currently involved in this promising technology. In 2016, Everspin released the first 256M STT-MRAM chip, indicating the commercialization and application of STT-MRAM. Nevertheless, STT-MRAM still has some intrinsic limitations, such as dynamic write power and speed, compared with CMOS-based memory technologies. Following the technical evolution process from toggle-MRAM to STT-MRAM, the continuous pursuit of high performance, high density, low power and scalability, drives the intensive R&D of new memory technologies. In this paper, we will show the recent progress in advanced spintronic memories beyond STT-MRAM, such as the spin Hall effect (SHE)-driven and voltage-driven MRAMs. These advanced MRAM technologies do have some unique advantages compared with STT-MRAM, but they also suffer from new design and fabrication challenges. In addition, we will present the latest research in emerging spintronic devices, e.g., magnetic skyrmions, which are potential as information carriers in future spintronic memories, e.g., racetrack memory.
KW - Magnetic skyrmions
KW - Racetrack memory
KW - SHE-MRAM
KW - STT-MRAM
KW - Spintronic memory
KW - Voltage-driven MRAM
UR - https://www.scopus.com/pages/publications/85021204106
U2 - 10.1145/3060403.3060589
DO - 10.1145/3060403.3060589
M3 - 会议稿件
AN - SCOPUS:85021204106
T3 - Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI
SP - 299
EP - 304
BT - GLSVLSI 2017 - Proceedings of the Great Lakes Symposium on VLSI 2017
PB - Association for Computing Machinery
T2 - 27th Great Lakes Symposium on VLSI, GLSVLSI 2017
Y2 - 10 May 2017 through 12 May 2017
ER -