Accuracy correction of transient thermal resistance test of bipolar transistors via method of ΔV_be

A new method of accuracy correction is presented for improving the measurement accuracy of ΔV_be of a bipolar transistor in testing its transient thermal resistance. The method is based on the analysis of errors induced by the case temperature fluctuation and the measurement time delay. A bipolar transistor of the type of 3DK457 (with FO metal-pack) is taken as an example. It shows that, compared with the method of infrared scanning thermograph and standard electricity, the method proposed here for ΔV_be correction of bipolar transistors features low measurement costs and high measurement efficiency while maintains high measurement accuracy.