@inproceedings{645fc25262094d538032565008f1ef0d,
title = "Ab initio study on hexagonal Ge2Sb2Te5- A phase-change material for nonvolatile memories",
abstract = "On the basis of ab initio total energy calculations, we have performed an extensive study on the stacking sequence and random occupation of Ge and Sb to make the same layer in stable hexagonal Ge2Sb2Te 5 (h-GST), an excellent candidate for phase change random memory applications. The results demonstrate that the atomic arrangements have great effects on lattice parameter c and electronic properties of h-GST. h-GST changes from semiconductor to metallic behavior as varying the atomic sequence.",
keywords = "Atomic arrangements, First principles, Phase-change materials",
author = "Zhimei Sun and Yuanchun Pan and Baisheng Sa and Jian Zhou",
year = "2011",
doi = "10.4028/www.scientific.net/MSF.687.7",
language = "英语",
isbn = "9783037851692",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "7--11",
booktitle = "Functional and Electronic Materials",
address = "瑞士",
}