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A ternary SnS1.26Se0.76 alloy for flexible broadband photodetectors

  • Lena Du
  • , Cong Wang
  • , Jingzhi Fang
  • , Bin Wei
  • , Wenqi Xiong
  • , Xiaoting Wang
  • , Lijun Ma
  • , Xiaofeng Wang
  • , Zhongming Wei
  • , Congxin Xia
  • , Jingbo Li*
  • , Zhongchang Wang
  • , Xinzheng Zhang
  • , Qian Liu
  • *此作品的通讯作者
  • National Center for Nanoscience and Technology
  • University of Chinese Academy of Sciences
  • Nankai University
  • CAS - Institute of Semiconductors
  • International Iberian Nanotechnology Laboratory
  • Henan Normal University

科研成果: 期刊稿件文章同行评审

摘要

Layered two-dimensional (2D) materials often display unique functionalities for flexible 2D optoelectronic device applications involving natural flexibility and tunable bandgap by bandgap engineering. Composition manipulation by alloying of these 2D materials represents an effective way in fulfilling bandgap engineering, which is particularly true for SnS2xSe2(1-x) alloys showing a continuous bandgap modulation from 2.1 eV for SnS2 to 1.0 eV for SnSe2. Here, we report that a ternary SnS1.26Se0.76 alloy nanosheet can serve as an efficient flexible photodetector, possessing excellent mechanical durability, reproducibility, and high photosensitivity. The photodetectors show a broad spectrum detection ranging from visible to near infrared (NIR) light. These findings demonstrate that the ternary SnS1.26Se0.76 alloy can act as a promising 2D material for flexible and wearable optoelectronic devices.

源语言英语
页(从-至)14352-14359
页数8
期刊RSC Advances
9
25
DOI
出版状态已出版 - 2019
已对外发布

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