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A Reliability Assessment Approach for GaN-Based Power Supply

  • Liang Jinghao
  • , Sun Bo*
  • , Guo Chunbing
  • , Cui Chengqiang
  • *此作品的通讯作者
  • Guangdong University of Technology
  • Ji Hua Laboratory

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

The impact of GaN devices on reliability of switch mode power supply (SMPS) is one of the research hotspots in recent years. This paper proposes a reliability assessment method for SMPS with GaN transistor. A simulation model with 3 cells for on-resistance of GaN transistors is proposed. A test platform is used to extract model parameters under different operation conditions. Test results have found that the on-resistance of the GaN device doubled after 50 seconds at 400V bias. after 10 seconds of on-state, the on-resistance drops to a rated value. Then, circuit simulation is carried out to assess the impact of aged GaN transistors on the performance of SMPS. Simulation results have found that after 180 minutes of SMPS operation, the on-resistance of the GaN device rises by 80%, while the efficiency of the power supply drops by 0.1%. Using the simulation model it is possible to calculate the efficiency of the SMPS after long working hours.

源语言英语
主期刊名2022 23rd International Conference on Electronic Packaging Technology, ICEPT 2022
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781665499057
DOI
出版状态已出版 - 2022
已对外发布
活动23rd International Conference on Electronic Packaging Technology, ICEPT 2022 - Dalian, 中国
期限: 10 8月 202213 8月 2022

出版系列

姓名2022 23rd International Conference on Electronic Packaging Technology, ICEPT 2022

会议

会议23rd International Conference on Electronic Packaging Technology, ICEPT 2022
国家/地区中国
Dalian
时期10/08/2213/08/22

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