摘要
A numerical method to simulate nanostructure formation due to electromigration in passivated Al specimens is developed based on the governing parameter for electromigration damage, AFD* gen. The nanostructure formation is influenced by conditions such as the current density and substrate temperature. The results of the simulations are verified through experiments, and good agreement between the simulations and experiments is found for changes in nanostructure volume. The simulation is expected to be useful for identifying effective conditions for nanostructure formation.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2201-2206 |
| 页数 | 6 |
| 期刊 | Journal of Electronic Materials |
| 卷 | 38 |
| 期 | 10 |
| DOI | |
| 出版状态 | 已出版 - 10月 2009 |
| 已对外发布 | 是 |
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