A novel SEU-tolerant MRAM latch circuit based on C-element

Deming Zhang; Wang Kang; Yuanqing Cheng; Geifei Wang; Dafine Ravelosona; Youguang Zhang; Jacques Olivier Klein; Weisheng Zhao

doi:10.1109/ICSICT.2014.7021415

A novel SEU-tolerant MRAM latch circuit based on C-element

Deming Zhang
, Wang Kang
, Yuanqing Cheng
, Geifei Wang
, Dafine Ravelosona
, Youguang Zhang
, Jacques Olivier Klein
, Weisheng Zhao^*

^*此作品的通讯作者

CNRS
Beihang University

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

11 引用（Scopus）

摘要

Benefiting from its inherent hardness to radiation and non-volatility, magnetic random access memory (MRAM) is considered as one of the most promising non-volatile memory (NVM) technologies for aerospace and avionic electronics. However, MRAM is still sensitive to single event upsets (SEU) due to its CMOS employed peripheral circuit. In this paper, we propose a novel SEU-tolerant MRAM latch circuit, which is based on the special device C-element. By using a physics-based MTJ compact model and the 40nm design kit, hybrid simulations have been performed and simulation results show that the proposed MRAM latch circuit is immune to radiation effects.

源语言	英语
主期刊名	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
编辑	Jia Zhou, Ting-Ao Tang
出版商	Institute of Electrical and Electronics Engineers Inc.
ISBN（电子版）	9781479932962
DOI	https://doi.org/10.1109/ICSICT.2014.7021415
出版状态	已出版 - 23 1月 2014
活动	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, 中国期限: 28 10月 2014 → 31 10月 2014

出版系列

姓名	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

会议

会议	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
国家/地区	中国
市	Guilin
时期	28/10/14 → 31/10/14

访问文件

10.1109/ICSICT.2014.7021415

其它文件与链接

链接到 Scopus 的出版物

引用此

Zhang, D., Kang, W., Cheng, Y., Wang, G., Ravelosona, D., Zhang, Y., Klein, J. O., & Zhao, W. (2014). A novel SEU-tolerant MRAM latch circuit based on C-element. 在 J. Zhou, & T.-A. Tang (编辑), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 文章 7021415 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021415

Zhang, Deming ; Kang, Wang ; Cheng, Yuanqing 等. / A novel SEU-tolerant MRAM latch circuit based on C-element. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. 编辑 / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

@inproceedings{fc25e644e2864e44b7c808e3a5c12db1,

title = "A novel SEU-tolerant MRAM latch circuit based on C-element",

abstract = "Benefiting from its inherent hardness to radiation and non-volatility, magnetic random access memory (MRAM) is considered as one of the most promising non-volatile memory (NVM) technologies for aerospace and avionic electronics. However, MRAM is still sensitive to single event upsets (SEU) due to its CMOS employed peripheral circuit. In this paper, we propose a novel SEU-tolerant MRAM latch circuit, which is based on the special device C-element. By using a physics-based MTJ compact model and the 40nm design kit, hybrid simulations have been performed and simulation results show that the proposed MRAM latch circuit is immune to radiation effects.",

author = "Deming Zhang and Wang Kang and Yuanqing Cheng and Geifei Wang and Dafine Ravelosona and Youguang Zhang and Klein, \{Jacques Olivier\} and Weisheng Zhao",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",

year = "2014",

month = jan,

day = "23",

doi = "10.1109/ICSICT.2014.7021415",

language = "英语",

series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Jia Zhou and Ting-Ao Tang",

booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

address = "美国",

}

Zhang, D , Kang, W , Cheng, Y, Wang, G, Ravelosona, D, Zhang, Y, Klein, JO & Zhao, W 2014, A novel SEU-tolerant MRAM latch circuit based on C-element. 在 J Zhou & T-A Tang (编辑), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021415, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, 中国, 28/10/14. https://doi.org/10.1109/ICSICT.2014.7021415

A novel SEU-tolerant MRAM latch circuit based on C-element. / Zhang, Deming ; Kang, Wang ; Cheng, Yuanqing 等.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. 编辑 / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021415 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - A novel SEU-tolerant MRAM latch circuit based on C-element

AU - Zhang, Deming

AU - Kang, Wang

AU - Cheng, Yuanqing

AU - Wang, Geifei

AU - Ravelosona, Dafine

AU - Zhang, Youguang

AU - Klein, Jacques Olivier

AU - Zhao, Weisheng

PY - 2014/1/23

Y1 - 2014/1/23

N2 - Benefiting from its inherent hardness to radiation and non-volatility, magnetic random access memory (MRAM) is considered as one of the most promising non-volatile memory (NVM) technologies for aerospace and avionic electronics. However, MRAM is still sensitive to single event upsets (SEU) due to its CMOS employed peripheral circuit. In this paper, we propose a novel SEU-tolerant MRAM latch circuit, which is based on the special device C-element. By using a physics-based MTJ compact model and the 40nm design kit, hybrid simulations have been performed and simulation results show that the proposed MRAM latch circuit is immune to radiation effects.

AB - Benefiting from its inherent hardness to radiation and non-volatility, magnetic random access memory (MRAM) is considered as one of the most promising non-volatile memory (NVM) technologies for aerospace and avionic electronics. However, MRAM is still sensitive to single event upsets (SEU) due to its CMOS employed peripheral circuit. In this paper, we propose a novel SEU-tolerant MRAM latch circuit, which is based on the special device C-element. By using a physics-based MTJ compact model and the 40nm design kit, hybrid simulations have been performed and simulation results show that the proposed MRAM latch circuit is immune to radiation effects.

UR - https://www.scopus.com/pages/publications/84946691517

U2 - 10.1109/ICSICT.2014.7021415

DO - 10.1109/ICSICT.2014.7021415

M3 - 会议稿件

AN - SCOPUS:84946691517

T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

A2 - Zhou, Jia

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Y2 - 28 October 2014 through 31 October 2014

ER -

Zhang D , Kang W , Cheng Y, Wang G, Ravelosona D, Zhang Y 等. A novel SEU-tolerant MRAM latch circuit based on C-element. 在 Zhou J, Tang TA, 编辑, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021415. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). doi: 10.1109/ICSICT.2014.7021415

A novel SEU-tolerant MRAM latch circuit based on C-element

摘要

出版系列

会议

访问文件

其它文件与链接

学术指纹

引用此