TY - JOUR
T1 - A novel controllable synthesis of silica nanotube arrays with ultraviolet photoluminescence
AU - Hu, Mingzhe
AU - Liu, Yinglin
AU - Gu, Haoshuang
AU - Yu, Rong
AU - MacManus-Driscoll, Judith L.
AU - Robinson, Adam P.
PY - 2009/7
Y1 - 2009/7
N2 - The synthesis of large-scale one-dimensional silica nanotube (SNT) arrays embedded in Si substrate is demonstrated by using the combination of AAO template mask and Ar ion milling technique. The geometry of the SNTs could be precisely controlled by the process parameters, which included that the SNT diameter and the interpore distance were controlled by AAO anodization voltage and H3PO4 pore widening time, while the length of SNT was controlled by ion milling time and AAO aspect ratio. Also, the SNT fabrication parameters could be related to their photoluminescence (PL) emitting properties, when anodized at 40 V, pore widening in H3PO4 acid for 70 min and ion milled for 5 min, a strong intensity and stable ultraviolet (UV) light of 3.25 eV (381 nm) emitted from the SNTs under the excitation of 266 nm laser, which could be assumed arising from twofold coordinated silicon lone pair centers in the oxygen deficiency SNTs. The present fabrication of SNT arrays presents a novel method for intensity and frequency adjustable ultraviolet optoelectronic devices.
AB - The synthesis of large-scale one-dimensional silica nanotube (SNT) arrays embedded in Si substrate is demonstrated by using the combination of AAO template mask and Ar ion milling technique. The geometry of the SNTs could be precisely controlled by the process parameters, which included that the SNT diameter and the interpore distance were controlled by AAO anodization voltage and H3PO4 pore widening time, while the length of SNT was controlled by ion milling time and AAO aspect ratio. Also, the SNT fabrication parameters could be related to their photoluminescence (PL) emitting properties, when anodized at 40 V, pore widening in H3PO4 acid for 70 min and ion milled for 5 min, a strong intensity and stable ultraviolet (UV) light of 3.25 eV (381 nm) emitted from the SNTs under the excitation of 266 nm laser, which could be assumed arising from twofold coordinated silicon lone pair centers in the oxygen deficiency SNTs. The present fabrication of SNT arrays presents a novel method for intensity and frequency adjustable ultraviolet optoelectronic devices.
KW - AAO template mask
KW - Ion milling technique
KW - Photoluminescence (PL)
KW - Silica nanotube (SNT)
UR - https://www.scopus.com/pages/publications/67349173202
U2 - 10.1016/j.solidstatesciences.2009.03.025
DO - 10.1016/j.solidstatesciences.2009.03.025
M3 - 文章
AN - SCOPUS:67349173202
SN - 1293-2558
VL - 11
SP - 1252
EP - 1257
JO - Solid State Sciences
JF - Solid State Sciences
IS - 7
ER -