TY - GEN
T1 - A multi-level cell for STT-MRAM realized by capping layer adjustment
AU - Wang, M.
AU - Peng, S.
AU - Zhang, Y.
AU - Zhang, Y.
AU - Ravelosona, D.
AU - Zhao, W.
AU - Zhang, Q.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Spin transfer torque magnetic random access memory (STT-MRAM) is recommended as one of the promising candidates for nonvolatile memory technologies. Compared with traditional memory technologies, STT-MRAM demonstrates low power consumption, fast access speed and infinite endurance, while the storage capacity reported so far has not been that large in contrast with SRAM or DRAM. Considering this, multi-level cells (MLC) based on more than one magnetic tunnel junctions (MTJ) have been proposed to further enhance the memory density.
AB - Spin transfer torque magnetic random access memory (STT-MRAM) is recommended as one of the promising candidates for nonvolatile memory technologies. Compared with traditional memory technologies, STT-MRAM demonstrates low power consumption, fast access speed and infinite endurance, while the storage capacity reported so far has not been that large in contrast with SRAM or DRAM. Considering this, multi-level cells (MLC) based on more than one magnetic tunnel junctions (MTJ) have been proposed to further enhance the memory density.
UR - https://www.scopus.com/pages/publications/84942474630
U2 - 10.1109/INTMAG.2015.7156499
DO - 10.1109/INTMAG.2015.7156499
M3 - 会议稿件
AN - SCOPUS:84942474630
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -