A-igzo tft based active matrix pressure sensor by integrating zno nanowires as sensing unit

In this paper, we demonstrated an amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) based active matrix touch sensor array by integrating ZnO nanowires (NWs) as pressure sensitive materials. ZnO NWs servicing as a piezoelectric material shown superior mechanical-electric transition performance as well as excellent compatibility with TFT process. The ZnO NWs were connected with switching TFT in series. When a pressure was applied on sensor unit, the deformation of ZnO NWs would induce change of resistance or metal-semiconductor barrier height between ZnO NWs and contact metal, thus the current following through pressure unit would change. By using this method, we accurately mapped pressure change in a region of 1.4cm*1.4cm². The demonstration in this work gave a possible solution for integrating pressure sensor in display panel in future applications.