A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides

Jing Li; Jiehe Sui; Yanling Pei; Celine Barreteau; David Berardan; Nita Dragoe; Wei Cai; Jiaqing He; Li Dong Zhao

doi:10.1039/c2ee22622g

A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides

Jing Li
, Jiehe Sui^*
, Yanling Pei
, Celine Barreteau
, David Berardan
, Nita Dragoe
, Wei Cai
, Jiaqing He
, Li Dong Zhao

^*此作品的通讯作者

材料科学与工程学院

Harbin Institute of Technology
Institut de Chimie Moléculaire et des Matériaux d'Orsay
Frontier Institute of Science and Technology

科研成果: 期刊稿件 › 文章 › 同行评审

380 引用（Scopus）

摘要

A high ZT value of ∼1.1 at 923 K in the BiCuSeO system is achieved via heavily doping with Ba and refining grain sizes (200-400 nm), which is higher than any thermoelectric oxide. Excellent thermal and chemical stabilities up to 923 K and high thermoelectric performance confirm that the BiCuSeO system is promising for thermoelectric power generation applications.

源语言	英语
页（从-至）	8543-8547
页数	5
期刊	Energy and Environmental Science
卷	5
期	9
DOI	https://doi.org/10.1039/c2ee22622g
出版状态	已出版 - 9月 2012

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可持续发展目标 7 经济适用的清洁能源

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abstract = "A high ZT value of ∼1.1 at 923 K in the BiCuSeO system is achieved via heavily doping with Ba and refining grain sizes (200-400 nm), which is higher than any thermoelectric oxide. Excellent thermal and chemical stabilities up to 923 K and high thermoelectric performance confirm that the BiCuSeO system is promising for thermoelectric power generation applications.",

author = "Jing Li and Jiehe Sui and Yanling Pei and Celine Barreteau and David Berardan and Nita Dragoe and Wei Cai and Jiaqing He and Zhao, \{Li Dong\}",

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T1 - A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides

AU - Li, Jing

AU - Sui, Jiehe

AU - Pei, Yanling

AU - Barreteau, Celine

AU - Berardan, David

AU - Dragoe, Nita

AU - Cai, Wei

AU - He, Jiaqing

AU - Zhao, Li Dong

PY - 2012/9

Y1 - 2012/9

N2 - A high ZT value of ∼1.1 at 923 K in the BiCuSeO system is achieved via heavily doping with Ba and refining grain sizes (200-400 nm), which is higher than any thermoelectric oxide. Excellent thermal and chemical stabilities up to 923 K and high thermoelectric performance confirm that the BiCuSeO system is promising for thermoelectric power generation applications.

AB - A high ZT value of ∼1.1 at 923 K in the BiCuSeO system is achieved via heavily doping with Ba and refining grain sizes (200-400 nm), which is higher than any thermoelectric oxide. Excellent thermal and chemical stabilities up to 923 K and high thermoelectric performance confirm that the BiCuSeO system is promising for thermoelectric power generation applications.

UR - https://www.scopus.com/pages/publications/84865215653

U2 - 10.1039/c2ee22622g

DO - 10.1039/c2ee22622g

M3 - 文章

AN - SCOPUS:84865215653

SN - 1754-5692

VL - 5

SP - 8543

EP - 8547

JO - Energy and Environmental Science

JF - Energy and Environmental Science

IS - 9

ER -

A high thermoelectric figure of merit ZT > 1 in Ba heavily doped BiCuSeO oxyselenides

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