TY - GEN
T1 - A high reliability CMOS implantable interface for wireless neural recording microsystem
AU - Li, Hongge
AU - Zhang, Youguang
PY - 2008
Y1 - 2008
N2 - A novel wireless implantable microsystem using a high-reliability digital technology is proposed for recording the hybrid neural signal. In order to enhance the neural recording intactness, we employ a kind of high-reliability design architecture, which includes a self-check circuit and a transmitter channel error check circuit. The proposed high-reliability structure can identify possible faults in any implantable interface. A dynamical pattern double channel circuit is designed for the signal synchronous transfer in this interface. A low-power self-check circuit is designed too. The high-reliability and lowpower implantable interface using a full-CMOS technology has been designed and verified. A prototype has been implemented, whose correct operation has been verified by mean of postlayout simulations and experimental measurements.
AB - A novel wireless implantable microsystem using a high-reliability digital technology is proposed for recording the hybrid neural signal. In order to enhance the neural recording intactness, we employ a kind of high-reliability design architecture, which includes a self-check circuit and a transmitter channel error check circuit. The proposed high-reliability structure can identify possible faults in any implantable interface. A dynamical pattern double channel circuit is designed for the signal synchronous transfer in this interface. A low-power self-check circuit is designed too. The high-reliability and lowpower implantable interface using a full-CMOS technology has been designed and verified. A prototype has been implemented, whose correct operation has been verified by mean of postlayout simulations and experimental measurements.
UR - https://www.scopus.com/pages/publications/63549086263
U2 - 10.1109/EDSSC.2008.4760664
DO - 10.1109/EDSSC.2008.4760664
M3 - 会议稿件
AN - SCOPUS:63549086263
SN - 9781424425402
T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Y2 - 8 December 2008 through 10 December 2008
ER -