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A dynamic reference scheme to improve the sensing reliability of magnetic random access memory

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

Emerging magnetic random access memory (MRAM) has been considered as a promising candidate for the next generation high speed, low power and scalable nonvolatile memory technology. However many challenges and issues are still existing before its wide commercialization. One of the critical issues is its low sensing reliability due to the relatively small tunnel magneto-resistance (TMR) ratio of the magnetic tunneling junction (MTJ) and the increasing process variations etc. In this paper, we propose a new MRAM reference cell design as well as a novel dynamic reference scheme to improve the sensing reliability of MRAM. Using a physics-based MTJ model and a CMOS design kit, Monte-Carlo simulations have been performed to demonstrate its effectiveness in 40 nm technology node.

源语言英语
主期刊名Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
编辑Jia Zhou, Ting-Ao Tang
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9781479932962
DOI
出版状态已出版 - 23 1月 2014
活动2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, 中国
期限: 28 10月 201431 10月 2014

出版系列

姓名Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

会议

会议2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
国家/地区中国
Guilin
时期28/10/1431/10/14

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