TY - GEN
T1 - A Convenient Temperature Estimation Method for Half-Bridge of RC-IGBT with One Monitoring Unit
AU - Yang, Yanyong
AU - Shan, Zhenyu
AU - Ding, Xiaofeng
AU - Zhang, Pinjia
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Temperature monitoring of power devices is critical for control optimization and health management. However, existing monitoring methods require a monitoring unit for each device, which increases complexity and cost. The reverse conducting insulated gate bipolar transistor (RC-IGBT) has great advantages in practical application, such as high power density. A convenient temperature estimation method for RC-IGBT half-bridge using one monitoring unit is proposed in this paper. The peak reverse recovery current of the diode increases with the junction temperature. The peak reverse recovery currents of two bridge arms can be measured via turn-on collector current overshoot and turn-off collector current overshoot of one bridge arm. The temperatures of IGBT and free-wheeling diode (FWD) are close for RC-IGBT. Therefore, the temperatures of two bridge arms can be estimated with one monitoring unit. The method proposed provides a simple and convenient monitoring structure. The experimental results validate the feasibility of the proposed technique.
AB - Temperature monitoring of power devices is critical for control optimization and health management. However, existing monitoring methods require a monitoring unit for each device, which increases complexity and cost. The reverse conducting insulated gate bipolar transistor (RC-IGBT) has great advantages in practical application, such as high power density. A convenient temperature estimation method for RC-IGBT half-bridge using one monitoring unit is proposed in this paper. The peak reverse recovery current of the diode increases with the junction temperature. The peak reverse recovery currents of two bridge arms can be measured via turn-on collector current overshoot and turn-off collector current overshoot of one bridge arm. The temperatures of IGBT and free-wheeling diode (FWD) are close for RC-IGBT. Therefore, the temperatures of two bridge arms can be estimated with one monitoring unit. The method proposed provides a simple and convenient monitoring structure. The experimental results validate the feasibility of the proposed technique.
KW - reliability
KW - reverse conducting insulated gate bipolar transistor (RC-IGBT)
KW - temperature estimation
UR - https://www.scopus.com/pages/publications/85141471039
U2 - 10.1109/ICPET55165.2022.9918230
DO - 10.1109/ICPET55165.2022.9918230
M3 - 会议稿件
AN - SCOPUS:85141471039
T3 - 2022 4th International Conference on Power and Energy Technology, ICPET 2022
SP - 145
EP - 150
BT - 2022 4th International Conference on Power and Energy Technology, ICPET 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th International Conference on Power and Energy Technology, ICPET 2022
Y2 - 28 July 2022 through 31 July 2022
ER -