TY - GEN
T1 - A Comparative Study on Racetrack Memories
T2 - 7th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2018
AU - Kang, Wang
AU - Chen, Xing
AU - Zhu, Daoqian
AU - Zhang, Xichao
AU - Zhou, Yan
AU - Qiu, Keni
AU - Zhang, Youguang
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/15
Y1 - 2018/11/15
N2 - Racetrack memory (RM), a new storage scheme in which information flows along a nanotrack, has been considered as a potential candidate for future high-density storage device instead of the hard disk drive (HDD). The first RM, which was proposed in 2008 by IBM, relies on a train of opposite magnetic domains separated by domain walls (DWs), named DW-RM. Recently, an alternative information carrier, skyrmion, which was discovered in 2009, has been regarded as a promising replacement of DW for RM, named skyrmion-based RM (SK-RM). So, what are the relationship between DW and skyrmion? What are the key differences between DW and skyrmion, or between DW-RM and SK-RM? What benefits could SK-RM bring and what critical challenges need to be addressed before application? In this paper, we intend to answer these questions through a comparative study between DW-RM and SK-RM. This work will provide guidelines, especially, for circuit and architecture researchers on RM.
AB - Racetrack memory (RM), a new storage scheme in which information flows along a nanotrack, has been considered as a potential candidate for future high-density storage device instead of the hard disk drive (HDD). The first RM, which was proposed in 2008 by IBM, relies on a train of opposite magnetic domains separated by domain walls (DWs), named DW-RM. Recently, an alternative information carrier, skyrmion, which was discovered in 2009, has been regarded as a promising replacement of DW for RM, named skyrmion-based RM (SK-RM). So, what are the relationship between DW and skyrmion? What are the key differences between DW and skyrmion, or between DW-RM and SK-RM? What benefits could SK-RM bring and what critical challenges need to be addressed before application? In this paper, we intend to answer these questions through a comparative study between DW-RM and SK-RM. This work will provide guidelines, especially, for circuit and architecture researchers on RM.
KW - Spintronics
KW - domain wall (DW)
KW - racetrack memory-(RM)
KW - skyrmion
UR - https://www.scopus.com/pages/publications/85059799642
U2 - 10.1109/NVMSA.2018.00009
DO - 10.1109/NVMSA.2018.00009
M3 - 会议稿件
AN - SCOPUS:85059799642
T3 - Proceedings - 7th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2018
SP - 7
EP - 12
BT - Proceedings - 7th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2018
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 28 August 2018 through 31 August 2018
ER -