@inproceedings{82c2c9a741744ed5902abdb0126f16bb,
title = "3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling",
abstract = "This paper presents coupling characteristics of multiple traps in HKMG nMOSFETs by a 3D kinetic Monte-Carlo (KMC) simulator we developed, which includes several fully-coupled multi-physical models: trap generation/recombination, trapping/detrapping to/from channel, metal gate, and the interaction of traps. It shows that activation energy and trapping/detrapping from/to channel/gate impact on coupling of multiple traps. Interaction of traps complicates mechanism in TAT current, BTI, and RTN.",
keywords = "3D, HKMG, PBTI, capture time, coupling, detrapping, emission time, kinetic Monte-Carlo, multiple traps, nMOSFETs, threshold voltage shift, trap generation/recombination, trapping",
author = "Yun Li and Zhiyuan Lun and Peng Huang and Yijiao Wang and Hai Jiang and Gang Du and Xiaoyan Liu",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 ; Conference date: 09-09-2015 Through 11-09-2015",
year = "2015",
month = oct,
day = "5",
doi = "10.1109/SISPAD.2015.7292280",
language = "英语",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "148--151",
booktitle = "2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015",
address = "美国",
}