摘要
Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT. Here we show a maximum ZT of ~2.8 ± 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport].We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 778-783 |
| 页数 | 6 |
| 期刊 | Science |
| 卷 | 360 |
| 期 | 6390 |
| DOI | |
| 出版状态 | 已出版 - 18 5月 2018 |
指纹
探究 '3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals' 的科研主题。它们共同构成独一无二的指纹。引用此
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