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3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals

  • Cheng Chang
  • , Minghui Wu
  • , Dongsheng He
  • , Yanling Pei
  • , Chao Feng Wu
  • , Xuefeng Wu
  • , Hulei Yu
  • , Fangyuan Zhu
  • , Kedong Wang
  • , Yue Chen
  • , Li Huang
  • , Jing Feng Li
  • , Jiaqing He*
  • , Li Dong Zhao
  • *此作品的通讯作者
  • Southern University of Science and Technology
  • Tsinghua University
  • The University of Hong Kong
  • Chinese Academy of Sciences

科研成果: 期刊稿件文章同行评审

摘要

Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT. Here we show a maximum ZT of ~2.8 ± 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport].We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.

源语言英语
页(从-至)778-783
页数6
期刊Science
360
6390
DOI
出版状态已出版 - 18 5月 2018

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