1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

Ying Wang; Hongmei Wang; Yunqi Liu; Chong An Di; Yanming Sun; Weiping Wu; Gui Yu; Deqing Zhang; Daoben Zhu

doi:10.1021/ja064580x

1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

Ying Wang
, Hongmei Wang
, Yunqi Liu^*
, Chong An Di
, Yanming Sun
, Weiping Wu
, Gui Yu
, Deqing Zhang
, Daoben Zhu

^*此作品的通讯作者

CAS - Institute of Chemistry

科研成果: 期刊稿件 › 文章 › 同行评审

92 引用（Scopus）

摘要

Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm² V^-1 s^-1 and an on/off ratio of nearly 5 × 10⁴. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade^-1).

源语言	英语
页（从-至）	13058-13059
页数	2
期刊	Journal of the American Chemical Society
卷	128
期	40
DOI	https://doi.org/10.1021/ja064580x
出版状态	已出版 - 11 10月 2006
已对外发布	是

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title = "1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage",

abstract = "Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 × 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1).",

author = "Ying Wang and Hongmei Wang and Yunqi Liu and Di, \{Chong An\} and Yanming Sun and Weiping Wu and Gui Yu and Deqing Zhang and Daoben Zhu",

year = "2006",

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day = "11",

doi = "10.1021/ja064580x",

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TY - JOUR

T1 - 1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

AU - Wang, Ying

AU - Wang, Hongmei

AU - Liu, Yunqi

AU - Di, Chong An

AU - Sun, Yanming

AU - Wu, Weiping

AU - Yu, Gui

AU - Zhang, Deqing

AU - Zhu, Daoben

PY - 2006/10/11

Y1 - 2006/10/11

N2 - Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 × 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1).

AB - Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 × 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1).

UR - https://www.scopus.com/pages/publications/33749530042

U2 - 10.1021/ja064580x

DO - 10.1021/ja064580x

M3 - 文章

AN - SCOPUS:33749530042

SN - 0002-7863

VL - 128

SP - 13058

EP - 13059

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 40

ER -

1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

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