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Voltage control of magnetism in ferromagnetic structures

  • L. Herrera Diez*
  • , W. Lin
  • , A. Bernand-Mantel
  • , L. Ranno
  • , D. Givord
  • , L. Vila
  • , Patrick Warin
  • , Alain Marty
  • , N. Lei
  • , T. Devolder
  • , J. V. Kim
  • , N. Vernier
  • , P. Lecoeur
  • , D. Ravelosona
  • *Corresponding author for this work
  • CNRS
  • Commissariat à l’énergie atomique et aux énergies alternatives

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Until now, spintronics devices have relied on polarized currents, which still generate relatively high dissipation, particularly for nanodevices based on DW motion. A novel solution to further reduce power consumption is emerging, based on electric field (E) gating to control the magnetic state. Here, we will describe the state of the art and our recent experiments on voltage induced changes in the magnetic properties of ferromagnetic metals. A thorough description of the advances in terms of control of intrinsic properties such as magnetic anisotropy and ferromagnetic transition temperature as well as in intrinsic properties like coercive field and domain wall motion will be presented. Additionally, a section will be dedicated to the summary of the key aspects concerning the fabrication and performance of magneto-electric field-effect devices.

Original languageEnglish
Title of host publicationSpintronics V
DOIs
StatePublished - 2012
Externally publishedYes
EventSpintronics V - San Diego, CA, United States
Duration: 12 Aug 201216 Aug 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8461
ISSN (Print)0277-786X

Conference

ConferenceSpintronics V
Country/TerritoryUnited States
CitySan Diego, CA
Period12/08/1216/08/12

Keywords

  • Electric-field effect
  • Magnetic anisotropy
  • Magnetic domain wall
  • Magneto-electric devices

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