@inproceedings{84fc54a12bb340bc89208a3f769f8ac7,
title = "VOC gas sensing based on the BJT mode of gated LBJT device",
abstract = "Volatile organic compounds (VOCs) gas sensor based on gated lateral bipolar junction transistor (LBJT) was developed in this study. The device was fabricated using 0.35-μm logic process by Magnachip-Hynix Co. Ltd. under the Integrated Circuit Design education Center Multi Project Wafer (IDEC-MPW) program. Solvatochromic dye as the sensing membrane was coated on the floating gate of the device. A semiconductor test and analyzer (STA-EL421, ELECS) was used to measure the sensing results. Following the results, we found that the sensing device which used the gated LBJT device has fast responsibility and reversibility to VOC gases (acetone etc.).",
keywords = "Gated lateral bipolar junction transistor, Solvatochromic dye, Volatile organic compounds (VOCs)",
author = "Heng Yuan and Bo Wang and Yeom, \{Se Hyuk\} and Kim, \{Kyu Jin\} and Kwon, \{Dae Hyuk\} and Kang, \{Shin Won\}",
year = "2011",
doi = "10.4028/www.scientific.net/AMR.320.597",
language = "英语",
isbn = "9783037852118",
series = "Advanced Materials Research",
pages = "597--600",
booktitle = "Key Engineering Materials and Computer Science",
note = "2011 International Conference on Key Engineering Materials and Computer Science, KEMCS 2011 ; Conference date: 06-08-2011 Through 07-08-2011",
}